Specific Process Knowledge/Lithography/LiftOff: Difference between revisions
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*'''1.''' The substrate is coated with the masking material. | *'''1.''' The substrate is coated with the masking material. | ||
*'''2'''. The masking material is patterned. The mask must be a negative image of the desired material pattern. | *'''2'''. The masking material is patterned. The mask must be a negative image of the desired material pattern. | ||
*'''3'''. The material is deposited on top of both mask and substrate. The mask | *'''3'''. The material is deposited on top of both mask and substrate. The mask sidewall slope should be negative in order to prevent the material covering the sidewalls during deposition. | ||
*'''4'''. The masking material is dissolved, thus lifting part of the deposited material. | *'''4'''. The masking material is dissolved, thus lifting part of the deposited material. | ||
*'''5'''. The remaining material forms the desired pattern on the substrate. | *'''5'''. The remaining material forms the desired pattern on the substrate. | ||