Specific Process Knowledge/Lithography/LiftOff: Difference between revisions
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=Lift-off process= | =Lift-off process= | ||
[[Image:Lift-off process.png|500x500px|thumb|right|Schematic of the lift-off process.]] | |||
The lift-off process is used to pattern a material that can be deposited as a film on a substrate. The material is patterned by depositing the film on top of a patterned masking material, which is then dissolved, thus leaving only parts of the substrate covered in the material. Although this may in theory be done using any combination of mask and material, the most common is using photoresist as a lift-off mask for metal. | |||
*1. | The image to the left shows a schematic of the lift off process. | ||
*2. | *1. The substrate is coated with the masking material. | ||
*3. | *2. The masking material is patterned. The mask must be a negative image of the desired material pattern. The mask sidewalls should be negative in order to prevent the material covering the sidewalls during deposition. | ||
*4. | *3. The material is deposited on top of both mask and substrate. | ||
*5. | *4. The masking matreial is dissolved, thus lifting part of the deposited material. | ||
*5. The remaining material forms the desired pattern on the substrate. | |||
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