Specific Process Knowledge/Lithography/LiftOff: Difference between revisions
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==Comparing Lift-off equipment== | ==Comparing Lift-off equipment== | ||
Revision as of 09:36, 7 March 2014
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Lift-off process
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Comparing Lift-off equipment
| Equipment | Lift-off Wet Bench | Lift-off (4", 6") | |
|---|---|---|---|
| Purpose |
|
| |
| Bath chemical |
Acetone |
NMP (Remover 1165) | |
| Process parameters | Process temperature |
Room temperature |
Heating of the bath is possible. The heating has been limited to 37°C |
| Ultrasonic agitation |
Continuous (on/off) |
Continuous or pulsed The power may be varied | |
| Substrates | Substrate size |
|
|
| Allowed materials |
Silicon or glass wafers Film or patterning of all but Type IV (Pb, Te) |
Silicon or glass wafers Film or patterning of all but Type IV (Pb, Te) | |
| Batch |
1 - 25 |
1 - 8 | |
Lift-off Wet Bench
This bench is only for wafers with metal!
The user manual, and contact information can be found in LabManager
Process information
Here are the main rules for lift-off bench use:
- Place the wafers in a dedicated wafer holder.
- Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
- Rinse your wafers for 4-5 min. in running water after stripping.
Find more info about the lift-off process here: Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process
Lift-off (4", 6")
The user manual, and contact information can be found in LabManager
Process information
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