Specific Process Knowledge/Lithography/LiftOff: Difference between revisions
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=Lift-off Wet Bench= | =Lift-off Wet Bench= | ||
[[Image: | [[Image:Lift-off wet bench.JPG|300x300px|thumb|Lift-off wet bench in D-3]] | ||
This bench is only for wafers with metal! | This bench is only for wafers with metal! | ||
Revision as of 16:04, 5 March 2014
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Comparing Lift-off equipment
| Equipment | Lift-off Wet Bench | Lift-off (4", 6") | |
|---|---|---|---|
| Purpose |
|
| |
| Bath chemical |
Acetone |
NMP (Remover 1165) | |
| Process parameters | Process temperature |
Room temperature |
Heating of the bath is possible. The heating has been limited to 37°C |
| Ultrasonic agitation |
Continuous |
Continuous or pulsed | |
| Substrates | Substrate size |
|
|
| Allowed materials |
All cleanroom materials |
All cleanroom materials | |
| Batch |
1 - 25 |
1 - 8 | |
Lift-off Wet Bench
This bench is only for wafers with metal!
The user manual, and contact information can be found in LabManager
Process information
Here are the main rules for lift-off bench use:
- Place the wafers in a dedicated wafer holder.
- Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
- Rinse your wafers for 4-5 min. in running water after stripping.
Find more info about the lift-off process here: Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process
Lift-off (4", 6")
The user manual, and contact information can be found in LabManager
Process information
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