Specific Process Knowledge/Lithography/LiftOff: Difference between revisions
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=Lift-off (4", 6")= | =Lift-off (4", 6")= | ||
'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=71 LabManager]''' | |||
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Revision as of 15:29, 5 March 2014
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Comparing Lift-off equipment
Equipment | Lift-off Wet Bench | Lift-off (4", 6") | |
---|---|---|---|
Purpose |
|
| |
Bath chemical |
Acetone |
NMP (Remover 1165) | |
Process parameters | Process temperature |
Room temperature |
Heating of the bath is possible. The heating has been limited to 37°C |
Ultrasonic agitation |
Continuous |
Continuous or pulsed | |
Substrates | Substrate size |
|
|
Allowed materials |
All cleanroom materials |
All cleanroom materials | |
Batch |
1 - 25 |
1 - 8 |
Lift-off Wet Bench
The user manual, and contact information can be found in LabManager
This bench is only for wafers with metal!
Here are the main rules for lift-off bench use:
- Place the wafers in a dedicated wafer holder.
- Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
- Rinse your wafers for 4-5 min. in running water after stripping.
Find more info about the lift-off process here: Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process
Lift-off (4", 6")
The user manual, user APV, and contact information can be found in LabManager
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