Specific Process Knowledge/Lithography/LiftOff: Difference between revisions
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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | ||
|style="background:WhiteSmoke; color:black" align="center"|<b>[[ | |style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific Process Knowledge/Lithography/LiftOff#Lift-off Wet Bench|Lift-off Wet Bench]]</b> | ||
|style="background:WhiteSmoke; color:black" align="center"|<b>[[ | |style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific Process Knowledge/Lithography/LiftOff#Lift-off (4", 6")|Lift-off (4", 6")]]</b> | ||
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!style="background:silver; color:black;" align="center" width="60"|Purpose | !style="background:silver; color:black;" align="center" width="60"|Purpose |
Revision as of 15:10, 5 March 2014
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Comparing HMDS priming
Equipment | Lift-off Wet Bench | Lift-off (4", 6") | |
---|---|---|---|
Purpose |
|
| |
Priming chemical |
hexamethyldisilizane (HMDS) | ||
Performance | Contact angle |
standard recipe 82° (on SiO2) |
60° - 90°; standard recipe 82° (on SiO2) |
Process parameters | Process temperature |
150°C |
50°C |
Process time |
32.5 minutes |
3 min / wafer | |
Substrates | Substrate size |
|
100 mm wafers |
Allowed materials |
All cleanroom materials |
Silicon (with oxide, nitride, or metal films or patterning) Glass (borosilicate and quartz) | |
Batch |
1 - 25, multiple batches possible |
1 - 25 |
Lift-off Wet Bench
This bench is only for wafers with metal!
Here are the main rules for lift-off bench use:
- Place the wafers in a dedicated wafer holder.
- Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
- Rinse your wafers for 4-5 min. in running water after stripping.
Find more info about the lift-off process here: Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process
Lift-off (4", 6")
bla bla bla