Specific Process Knowledge/Lithography/LiftOff: Difference between revisions

From LabAdviser
Taran (talk | contribs)
Taran (talk | contribs)
No edit summary
Line 6: Line 6:


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific_Process_Knowledge/Lithography/Pretreatment#HMDS oven|HMDS oven]]</b>
|style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific Process Knowledge/Lithography/LiftOff#Lift-off Wet Bench|Lift-off Wet Bench]]</b>
|style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]</b>
|style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific Process Knowledge/Lithography/LiftOff#Lift-off (4", 6")|Lift-off (4", 6")]]</b>
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  

Revision as of 15:10, 5 March 2014

Feedback to this page: click here

Comparing HMDS priming

Equipment Lift-off Wet Bench Lift-off (4", 6")
Purpose
  • HMDS priming
  • HMDS priming only
  • HMDS priming and spin coating
Priming chemical

hexamethyldisilizane (HMDS)

Performance Contact angle

standard recipe 82° (on SiO2)

60° - 90°; standard recipe 82° (on SiO2)

Process parameters Process temperature

150°C

50°C

Process time

32.5 minutes

3 min / wafer

Substrates Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers

100 mm wafers

Allowed materials

All cleanroom materials

Silicon (with oxide, nitride, or metal films or patterning)

Glass (borosilicate and quartz)

Batch

1 - 25, multiple batches possible

1 - 25



Lift-off Wet Bench

Acetone lift-off: positioned in cleanroom 3

This bench is only for wafers with metal!

Here are the main rules for lift-off bench use:

  • Place the wafers in a dedicated wafer holder.
  • Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
  • Rinse your wafers for 4-5 min. in running water after stripping.

Find more info about the lift-off process here: Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process


Lift-off (4", 6")

bla bla bla