Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
| Line 88: | Line 88: | ||
|style="background:LightGrey; color:black"|Gas flows | |style="background:LightGrey; color:black"|Gas flows | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*SiH<math>_4</math>:0- | *SiH<math>_4</math>:0-50 sccm | ||
*N<math>_2</math>O:0- | *N<math>_2</math>O:0-4260 sccm | ||
*NH<math>_3</math>:0- | *NH<math>_3</math>:0-740 sccm | ||
*N<math>_2</math>:0-3000 sccm | *N<math>_2</math>:0-3000 sccm | ||
*GeH<math>_4</math>:0-6.00 sccm | *GeH<math>_4</math>:0-6.00 sccm | ||
*5%PH<math>_3</math>:0- | *5%PH<math>_3</math>:0-100 sccm | ||
* | *3%B<math>_2</math>H<math>_6</math>:0-1000 sccm | ||
| | | | ||
*SiH<math>_4</math>:0-60 sccm | *SiH<math>_4</math>:0-60 sccm | ||