Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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Phosphorus Drive-in furnace (A3)

A3 Phosphor Drive-in furnace. Positioned in cleanroom 2

The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide and drive-in of phosphorus after a pre-deposition. Phosphorus pre-deposition takes place in the Phosphorus Predep furnace (A4). The Phosphorus Drive-in furnace can also be used for drive-in of phosphorus which has been ion implanted.

The Phosphorus Drive-in furnace is the third furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.

The user manual, quality control instruction and results, technical information and contact information can be found in LabManager:

Phosphorus Drive-in furnace (A3)

Process knowledge

Phosphorus drive-in: look at the Dope with Phosphorus page
Oxidation: look at the Oxidation page
Annealing: look at the Annealing page

Quality Control - Recipe Parameters and Limits

Quality Controle (QC) for the processes "Wet1050" and "Dry1050"

QC Recipe:	Wet1050	Dry1050
H₂ flow	3 sccm	0 sccm
O₂ flow	2 sccm	5 sccm
Temperature	1050 C	1050 C
Oxidation time	30 min	100 min

QC limits	Thickness	Non-uniformity (both single wafer and over the boat)
Dry1050	110-116 nm	3 %
Wet1050	305-321 nm	5 %

Overview of the performance of the phosphorus drive-in furnace and some process related parameters

Purpose	Drive-in of phosphorous Oxidation of silicon Oxidation of phosphorous phase layer Annealing of the oxide.	Oxidation: Dry Wet: with torch (H₂+O₂)
Performance	Film thickness	Dry SiO₂: 50 Å to ~2000 Å (it takes too long to grow a thicker oxide) Wet SiO₂: 50 Å to ~3 µm (it takes too long to grow a thicker oxide)
Process parameter range	Process Temperature	800-1150 ^oC
	Process pressure	1 atm
	Gasses on the system	O₂, N₂ and H₂
Substrates	Batch size	1-30 100 mm wafer (or 50 mm wafers) per run
Substrates	Substrate material allowed	Silicon wafers (RCA cleaned) From A4 furnace directly (e.g. incl. Predep HF)

@@ Line 75: / Line 75: @@
 |-
 !style="background:silver; color:black;" align="center"|Purpose
-|style="background:LightGrey; color:black"|Drive-in of phosphor, oxidation of silicon and annealing of the oxide.
+|style="background:LightGrey; color:black"|
+*Drive-in of phosphorous
+*Oxidation of silicon
+*Oxidation of phosphorous phase layer
+*Annealing of the oxide.
 |style="background:WhiteSmoke; color:black"|Oxidation:
 *Dry
@@ Line 83: / Line 87: @@
 |style="background:LightGrey; color:black"|Film thickness
 |style="background:WhiteSmoke; color:black"|
-*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (takes too long to make it thicker)
+*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (it takes too long to grow a thicker oxide)
-*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (takes too long to make it thicker)
+*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (it takes too long to grow a thicker oxide)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
@@ Line 102: / Line 106: @@
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-30 4" wafer (or 2" wafers) per run
+*1-30 100 mm wafer (or 50 mm wafers) per run
 |-
 | style="background:LightGrey; color:black"|Substrate material allowed
@@ Line 108: / Line 112: @@
 *Silicon wafers (RCA cleaned)
 *From A4 furnace directly (e.g. incl. Predep HF)
-*In doubt: look at the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination information in LabManager] or please send a mail to [mailto:thinfilm@danchip.dtu.dk thinfilm@danchip.dtu.dk].
 |-
 |}