Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
| Line 170: | Line 170: | ||
|- | |- | ||
|Etch rate in Si | |Etch rate in Si | ||
| | |21 - 28 µm/min | ||
|- | |- | ||
|Non-uniformity | |Non-uniformity | ||
|2 | |2 % | ||
|- | |- | ||
|} | |} | ||
| Line 170: | Line 170: | ||
|- | |- | ||
|Etch rate in Si | |Etch rate in Si | ||
| | |21 - 28 µm/min | ||
|- | |- | ||
|Non-uniformity | |Non-uniformity | ||
|2 | |2 % | ||
|- | |- | ||
|} | |} | ||