Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

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-The Phosphorus Predep furnace (A4) can be used for predeposition of silicon wafers with phosphorus doping (N-type). In the furnace, the silicon wafers are positioned in a quarts boat.
+The Phosphorus Predep furnace (A4) can be used for predeposition of silicon wafers with phosphorus, resulting in N-type doping. In the furnace, the silicon wafers are positioned in a quarts boat.
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 ====Experimental setup====
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-boron doped wafers (p-type) was used. Four wafer to each of the five different predeposition temperatures. In the furnace was there five dummy wafers on each side of the processed wafers. The dummy wafer nearest to the test wafers was changed in between the runes so doping from a dummy wafer was minimized.
+boron doped wafers (p-type) were used - Four wafers for each of the five different predeposition temperatures. In the furnace five dummy wafers were placed on each side of the processed wafers. The dummy wafer nearest to the test wafers were changed in-between the runs to miniminze doping from this dummy wafer.
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-After the Predep was two wafer from each run taken out to be further processed. The wafers was 1, 2, 5, 6, 9, 10, 13, 14, 17, 18.
+After the predeposition two wafers from each run were taken out to be further processed. These wafers were: 1, 2, 5, 6, 9, 10, 13, 14, 17, 18.
-These wafers was dipped in BHF to get the phosphorus glass layer of before the Drive-in process. The Drive-in process was made in Danchip Phosphorus Drive-in furnace (A3). There was a dummy wafer in between the wafers from different temperatures so doping from wafer to wafer was minimized. The Drive-in was done with the process "DRY1050" with is a dry oxidation at 1050 <sup>o</sup>C for 100 minutes and 20 minutes annealing. At the oxdation was the O<sub>2</sub> flow was 5 SLM and N<sub>2</sub> flow for annealing was 3 SLM.
+These wafers were dipped in BHF to remove the phosphorus glass layer before the drive-in process. The drive-in process was made in the Phosphorus Drive-in furnace (A3). At the drive-in process a dummy wafer was placed in-between the wafers from different temperatures so doping from wafer to wafer was minimized. The drive-in was done with the process "DRY1050" with is a dry oxidation at 1050 <sup>o</sup>C for 100 minutes and 20 minutes annealing. At the oxidation was the O<sub>2</sub> flow was 5 SLM, and the N<sub>2</sub> flow for annealing was 3 SLM.
 ====Result====
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-There was made several measurement on the different wafer in the process. After the Predep was the Phosphorus glass layer thickness measured and the sheet resistance and slice resistivity measured on the same wafer after a BHF etch.
+Several measurements were done for the different wafers in the process. After the pre-deposition thickness of the Phosphorus glass layer was measured and the sheet resistance and slice resistivity measured on the same wafer after a BHF etch.
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