Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
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[[image:Cluster1a.jpg|200x200px|right|thumb|PECVD1 (part of cluster1) - positioned in cleanroom2]] | [[image:Cluster1a.jpg|200x200px|right|thumb|PECVD1 (part of cluster1) - positioned in cleanroom2]] | ||
[[image:PECVD3a.jpg|200x200px|right|thumb|PECVD3 - positioned in cleanroom1]] | [[image:PECVD3a.jpg|200x200px|right|thumb|PECVD3 - positioned in cleanroom1]] | ||
We have two (three) PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD1 has been decommissioned and PECVD3 are used for silicon based processing with small amounts (<5% wafer coverage) of metals where as PECVD2 is dedicated for clean wafers both for silicon based materials and III-V materials. | We have two (three) PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD1 has been decommissioned and PECVD3 are used for silicon based processing with small amounts (<5% wafer coverage) of metals where as PECVD2 is dedicated for clean wafers both for silicon based materials and III-V materials.Different quartz carriers are dedicated the two material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager. | ||
PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive spices. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors. | PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive spices. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors. | ||