Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

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There was made several measurement on the different wafer in the process. After the Predep was the Phosphorus glass layer thickness measured and the sheet resistance and slice resistivity measured on the same after a BHF etch.  
There was made several measurement on the different wafer in the process. After the Predep was the Phosphorus glass layer thickness measured and the sheet resistance and slice resistivity measured on the same wafer after a BHF etch.  




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|-
!  
!  
! colspan="2" | Elipsometer (center point only)
!
! colspan="2" | Ellipsometer (center point only)
! colspan="2" | Four Point Probe  
! colspan="2" | Four Point Probe  
|-
|-
! width="130" | Wafer #
! width="130" | Wafer #  
! width="130" | Temperature [C]
! width="130" | Thinkness [nm]
! width="130" | Thinkness [nm]
! width="130" | Refrative index
! width="130" | Refrative index
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! 3  
! 3  
| 850
| 27,4  
| 27,4  
| 1,4623
| 1,4623
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! 7  
! 7  
| 900
| 45,27
| 45,27
| 1,4622
| 1,4622
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|-
! 11  
! 11  
| 950
| 61,36
| 61,36
| 1,4625
| 1,4625
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|-
! 15  
! 15  
| 1000
| 80,45
| 80,45
| 1,4624
| 1,4624
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|-
! 19
! 19
| 1050
| 119,37
| 119,37
| 1,4623
| 1,4623
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|-
!  
!  
!
! colspan="2" | Avg. five point on Filmtek
! colspan="2" | Avg. five point on Filmtek
! colspan="2" | Four Point Probe  
! colspan="2" | Four Point Probe  
|-
|-
! width="130" | Wafer #   
! width="130" | Wafer #   
! width="130" | Temperature [C]
! width="130" | Thinkness [nm]
! width="130" | Thinkness [nm]
! width="130" | Refrative index
! width="130" | Refrative index
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! 2  
! 2  
| 850
| 110,44
| 110,44
| 1,4654
| 1,4654
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! 6  
! 6  
| 900
| 116,28
| 116,28
| 1,4629
| 1,4629
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! 9
! 9
| 950
| 137,06
| 137,06
| 1,4604
| 1,4604
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! 14  
! 14  
| 1000
| 141,46
| 141,46
| 1,4651
| 1,4651
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! 18
! 18
| 1050
| 139,87
| 139,87
| 1,4659
| 1,4659
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! Test
! Test
|
| 110,71
| 110,71
| 1,46286
| 1,46286

Revision as of 10:19, 17 October 2013

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The furnace A4 phosphorus predep(N-predep) can be used to predeposit silicon wafers with phosphor. The silicon wafers are positioned in a quarts boat. Phosphor is predeposited in the silicon wafers.

In preparation

THIS PAGE IS UNDER CONSTRUCTION

Test of Phosphorus Predep furnace

Purpose

To study the coherence between the temperature of the Predep and dive-in for doping with phosphorus in DTU-Danchip Phosphorus Predep furnace (A4).

Experiment setup

There was used 20 boron doped wafers (p-type). There was used four wafer to the five different temperature. There was five dummy wafers on each side of the test wafers. The dummy wafer nearest to the test wafers was changed in between the runes so doping from a dummy wafer was minimized.

Run # Temperature Process time with POCl3 Anneal time in N2 Wafer #
1 850 oC 15 minutes 20 miuntes 1, 2, 3, 4
2 900 oC 15 minutes 20 miuntes 5, 6, 7, 8
3 950 oC 15 minutes 20 miuntes 9, 10, 11, 12
4 1000 oC 15 minutes 20 miuntes 13, 14, 15, 16
5 1050 oC 15 minutes 20 miuntes 17, 18, 19, 20

After the Predep was two wafer from each run taken out to be further processed. The wafers was 1, 2, 5, 6, 9, 10, 13, 14, 17, 18.

These wafers was dipped in BHF to get the phosphorus glass layer of before the Drive-in process. The Drive-in process was made in Danchip Phosphorus Drive-in furnace (A3). There was a dummy wafer in between the wafers from different temperatures so doping from wafer to wafer was minimized. The Drive-in was done with the process "DRY1050" with is a dry oxidation at 1050 oC for 100 minutes and 20 minutes annealing. At the oxdation was the O2 flow was 5 SLM and N2 flow for annealing was 3 SLM.

Test measurement

Resistivity
Sheet resistance
SIMS Measurement After Drive-in Process at 1050 C
SIMS Measurement After Pre-dep


There was made several measurement on the different wafer in the process. After the Predep was the Phosphorus glass layer thickness measured and the sheet resistance and slice resistivity measured on the same wafer after a BHF etch.


Measurement after Predep
Ellipsometer (center point only) Four Point Probe
Wafer # Temperature [C] Thinkness [nm] Refrative index Sheet resistance [Ωsq] Slice Resistivity [Ωcm]
3 850 27,4 1,4623 311 17,32
7 900 45,27 1,4622 138,5 7,61
11 950 61,36 1,4625 16,12 0,859
15 1000 80,45 1,4624 7,4 0,392
19 1050 119,37 1,4623 6,6 0,246


Measurement after Drive-in
Avg. five point on Filmtek Four Point Probe
Wafer # Temperature [C] Thinkness [nm] Refrative index Sheet resistance [Ωsq] Slice Resistivity [Ωcm]
2 850 110,44 1,4654 189,7 13,06
6 900 116,28 1,4629 101,6 5,32
9 950 137,06 1,4604 10,05 0,527
14 1000 141,46 1,4651 4,72 0,216
18 1050 139,87 1,4659 3,23 0,165
Test 110,71 1,46286 - -
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