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Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

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There was made several measurement on the different wafer in the process. After the Predep was the Phosphorus glass layer thickness measured and the sheet resistance and slice resistivity measured on the same after a BHF etch.  
There was made several measurement on the different wafer in the process. After the Predep was the Phosphorus glass layer thickness measured and the sheet resistance and slice resistivity measured on the same wafer after a BHF etch.  




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|-
|-
!  
!  
! colspan="2" | Elipsometer (center point only)
!
! colspan="2" | Ellipsometer (center point only)
! colspan="2" | Four Point Probe  
! colspan="2" | Four Point Probe  
|-
|-
! width="130" | Wafer #
! width="130" | Wafer #  
! width="130" | Temperature [C]
! width="130" | Thinkness [nm]
! width="130" | Thinkness [nm]
! width="130" | Refrative index
! width="130" | Refrative index
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|-
|-
! 3  
! 3  
| 850
| 27,4  
| 27,4  
| 1,4623
| 1,4623
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|-
|-
! 7  
! 7  
| 900
| 45,27
| 45,27
| 1,4622
| 1,4622
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|-
|-
! 11  
! 11  
| 950
| 61,36
| 61,36
| 1,4625
| 1,4625
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|-
|-
! 15  
! 15  
| 1000
| 80,45
| 80,45
| 1,4624
| 1,4624
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|-
|-
! 19
! 19
| 1050
| 119,37
| 119,37
| 1,4623
| 1,4623
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|-
|-
!  
!  
!
! colspan="2" | Avg. five point on Filmtek
! colspan="2" | Avg. five point on Filmtek
! colspan="2" | Four Point Probe  
! colspan="2" | Four Point Probe  
|-
|-
! width="130" | Wafer #   
! width="130" | Wafer #   
! width="130" | Temperature [C]
! width="130" | Thinkness [nm]
! width="130" | Thinkness [nm]
! width="130" | Refrative index
! width="130" | Refrative index
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|-
|-
! 2  
! 2  
| 850
| 110,44
| 110,44
| 1,4654
| 1,4654
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|-
|-
! 6  
! 6  
| 900
| 116,28
| 116,28
| 1,4629
| 1,4629
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|-
|-
! 9
! 9
| 950
| 137,06
| 137,06
| 1,4604
| 1,4604
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|-
|-
! 14  
! 14  
| 1000
| 141,46
| 141,46
| 1,4651
| 1,4651
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|-
|-
! 18
! 18
| 1050
| 139,87
| 139,87
| 1,4659
| 1,4659
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|-
|-
! Test
! Test
|
| 110,71
| 110,71
| 1,46286
| 1,46286
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