Jump to content

Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

← Older editNewer edit →
VisualWikitext
Elkh (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
343 edits
Elkh (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
343 edits
Line 243: Line 243:
| style="background:LightGrey; color:black"|Exposure light/filters
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*365 nm, light intensity 7,0 mW&cm2 in Constant Intansity (CI2)mode
*SU8 filter (long-pass), light intensity 7mW/cm2 in Constant Power (CP) mode
*303 nm filters optinal
*365 nm filter optional
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* down to 1um exposure with 4inch chuck
*down to 1um exposure with 4inch chuck
* down to 5um exposure with 6inch chuck
*down to 5um exposure with 6inch chuck
|-
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:LightGrey; color:black"|Mask size
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/UVExposure"