Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Thermal evaporation of Cr in Thermal evaporator: Difference between revisions
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===In-Plane X-ray diffraction=== | ===In-Plane X-ray diffraction=== | ||
In-Plane diffraction spectrum acquired with Rigaku XRD SmartLab diffractometer. Incident angle <math>\omega = 0.4</math><sup>o</sup> IS=0.1mm, RS1=RS2=open. Scan speed: 1<sup>o</sup>/min. | |||
In-Plane diffraction spectrum acquired with [[Specific_Process_Knowledge/Characterization/XRD/XRD_SmartLab|Rigaku XRD SmartLab diffractometer]]. Incident angle <math>\omega = 0.4</math><sup>o</sup> IS=0.1mm, RS1=RS2=open. Scan speed: 1<sup>o</sup>/min. | |||
<gallery caption="" widths="600px" heights="400px" perrow="1"> | <gallery caption="" widths="600px" heights="400px" perrow="1"> | ||
image:eves_Cr_InPlane_XRD.png|Figure 13. In-Plane XRD scan. Substrate: Silicon 6" wafer with native oxide. | image:eves_Cr_InPlane_XRD.png|Figure 13. In-Plane XRD scan. Substrate: Silicon 6" wafer with native oxide. | ||