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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
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|HF SiO<!-- Recipe -->
|HF SiO<!-- Recipe -->
|40-43 nm/min<!-- Dep. rate [nm/min] -->
|63-64 nm/min<!-- Dep. rate [nm/min] -->
|1.983-1.984<!-- RI -->
|1.476-1.477<!-- RI -->
|&plusmn; 3.9-4.4%<!-- Unif. [%] -->
|&plusmn; 0.3-0.5%<!-- Unif. [%] -->
|Compressive: 565.4 MPa<!-- Stress [MPa] -->
|Compressive: 250.5 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|<!-- Comments -->
|40<!-- SiH4 [sccm] -->
|10<!-- SiH4 [sccm] -->
|20<!-- NH3 [sccm] -->
|<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
|1960<!-- N2 [sccm] -->
|392<!-- N2 [sccm] -->
|550 mTorr<!-- Pressure [mTorr] -->
|900 mTorr<!-- Pressure [mTorr] -->
|60LF<!-- Power [W] -->
|30HF<!-- Power [W] -->
|<!-- Load -->
|<!-- Load -->
|<!-- Tune -->
|<!-- Tune -->
|2:00/23:00(stress)<!-- Time [mm:ss] -->
|2:00/16:00(stress)<!-- Time [mm:ss] -->
|February 2017 bghe<!--Tested -->
|February 2017 bghe<!--Tested -->
|-
|-
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