Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions

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==Etching of Aluminium==
==Etching of Aluminium==


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<br clear="all" />
<br clear="all" />


==Comparison methode 1 and methode 2 for the process==
==Comparison of Aluminium Etch Methods==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|Methode 1]]
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Aluminium Etch]]
![[Specific Process Knowledge/Thin film deposition/PECVD|Methode 2]]
![[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual|Developer TMAH manual]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Generel description - methode 1
|Wet etch of Al
|Generel description - methode 2
|Wet etch/removal: TMAH<br>
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch.
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Parameter 1
!Etch rate range
|
*~60-100nm/min
|
|
*A
*~30nm/min (pure Al)
*B
|
|
*A
*~350 nm/min (depending on features size and etch load)
*B
|
*~30nm/min (not tested yet)
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Parameter 2
!Etch profile
|
*Isotropic
|
*Isotropic
|
|
*A
*Anisotropic (vertical sidewalls)
*B
*C
|
|
*A
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
|-


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!Substrate size
!Substrate size
|
|
*<nowiki>#</nowiki> small samples
*100 mm wafers (in bath)
*<nowiki>#</nowiki> 50 mm wafers
*150 mm wafers (in bath)
*<nowiki>#</nowiki> 100 mm wafers
*Any size (in beaker)
*<nowiki>#</nowiki> 150 mm wafers  
|
*Chips (6-60 mm)
*100 mm wafers
*150 mm wafers
|
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
|
|
*<nowiki>#</nowiki> small samples
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki> 150 mm wafers
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
|In 'Aluminium Etch' bath:
*See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login)
In beaker:
*Any material
|
*Every thing that is allowed in the Developer: TMAH Manual
|
|
*Allowed material 1
*Silicon
*Allowed material 2
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
|
*Allowed material 1
*Silicon
*Allowed material 2
*Silicon oxides
*Allowed material 3
*Silicon nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}

Latest revision as of 09:48, 31 May 2024

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here

Etching of Aluminium

Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison of Aluminium Etch Methods

Aluminium Etch Developer TMAH manual ICP metal IBE (Ionfab300+)
Generel description Wet etch of Al Wet etch/removal: TMAH

Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow here

Dry plasma etch of Al Sputtering of Al - pure physical etch.
Etch rate range
  • ~60-100nm/min
  • ~30nm/min (pure Al)
  • ~350 nm/min (depending on features size and etch load)
  • ~30nm/min (not tested yet)
Etch profile
  • Isotropic
  • Isotropic
  • Anisotropic (vertical sidewalls)
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • 100 mm wafers (in bath)
  • 150 mm wafers (in bath)
  • Any size (in beaker)
  • Chips (6-60 mm)
  • 100 mm wafers
  • 150 mm wafers
  • smaller pieces on a carrier wafer
  • #1 100mm wafers (when set up to 100mm wafers)
  • #1 150mm wafers (when set up to 150mm wafers)

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials In 'Aluminium Etch' bath:

In beaker:

  • Any material
  • Every thing that is allowed in the Developer: TMAH Manual
  • Silicon
  • Quartz/fused silica
  • Photoresist/e-beam resist
  • PolySilicon,
  • Silicon oxide
  • Silicon (oxy)nitride
  • Aluminium
  • Titanium
  • Chromium
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
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