Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano31

The Sinano3.1 recipe

Recipe Sinano3.1

Recipe	Gas	BCl3 3 sccm, HBR 17 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 50 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	180 secs
Conditions	Run ID	424, 425, 427, ID
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	The 180 nm zep resist etched down to 96 nm
	Wafer	WF_2B#2_feb06_2011

• The results of the Sinano3.1 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:BCl3 3 sccm, HBr 17 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 50 W PP, 20 degs, 180 secs

Nominal trench line width	'	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min		79	102	111	114	113	104	15
Sidewall angle	degs		85	83	83	81	80	82	2
CD loss	nm/edge		-11	-11	-17	-9	-5	-11	5
CD loss foot	nm/edge		-11	-2	-2	9	16	2	11
Bowing			20	30	35	33	36	31	7
Bottom curvature			-24	-18	-18	14	16	-6	19
Zep etch rate								30