Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

Latest revision as of 12:58, 17 April 2023

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EXPIRED. The Jipelec RTP has has been removed from the cleanroom in March 2023. It has been replaced with the Jipelec RTP2 that can be used instead.

Jipelec - Rapid Thermal Processing

The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).

The user manual, technical information and contact information can be found in LabManager:

Jipelec RTP

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose		RTP annealing
Process parameter range	Process Temperature	0-1100 ^oC (only short time a the high temperatures - see the user manual) III-V materials only to 450 ^oC Temperature ramp up to 50 ^oC/min
	Process pressure	1 atm Vacuum
	Gases on the system	N₂
Substrates	Batch size	One 50 mm or 100 mm wafer Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide on the back)
Substrates	Substrate materials allowed	A carrier is always needed: For III-V materials and metals a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used Silicon Silicon oxide Silicon nitride Fused silica/quartz Polysilicon III-V materials (on graphite carrier, max 450 ^oC) Some metals - (on graphite carrier). Ask the Thin Film group for permission

@@ Line 1: / Line 1: @@
+'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP click here]'''
+''This page is written by DTU Nanolab internal''
+==<span style="color:Red">EXPIRED. The Jipelec RTP has has been removed from the cleanroom in March 2023. It has been replaced with the Jipelec RTP2 that can be used instead.</span>==
+[[Category: Equipment |Thermal Jipelec]]
+[[Category: Thermal process|Jipelec]]
 ==Jipelec - Rapid Thermal Processing==
-[[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom 1]]
+[[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom A-4/ Photo: DTU Nanolab internal]]
-The Jipelec is a rapid thermal processing oven. It should be used for fast and well-controlled annealing or alloying of samples. It is possible to use a pyrometer to control the temperature (of the carrier).
+The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).
-{| border="2" cellspacing="0" cellpadding="0"
+'''The user manual, technical information and contact information can be found in LabManager:'''
+'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=164 Jipelec RTP]'''
+==Overview of the performance of the Jipelec RTP and some process related parameters==
+{| border="2" cellspacing="0" cellpadding="2"
 |-
 !style="background:silver; color:black;" align="center"|Purpose
-|style="background:LightGrey; color:black"|RTP annealing
-|style="background:WhiteSmoke; color:black"|
-|-
-!style="background:silver; color:black" align="center"|Performance
 |style="background:LightGrey; color:black"|
-|style="background:WhiteSmoke; color:black"|
+|style="background:WhiteSmoke; color:black"|RTP annealing
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*0-1000 <sup>o</sup>C
+*0-1100 <sup>o</sup>C (only short time a the high temperatures - see the user manual)
-*High temperature ramp >300 <sup>o</sup>C
+*III-V materials only to 450 <sup>o</sup>C
+*Temperature ramp up to 50 <sup>o</sup>C/min
 |-
 |style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
 *1 atm
-*vacuum
+*Vacuum
 |-
-|style="background:LightGrey; color:black"|Gasses on the system
+|style="background:LightGrey; color:black"|Gases on the system
 |style="background:WhiteSmoke; color:black"|
@@ Line 37: / Line 47: @@
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1 4" wafer (or 2" wafers) per run
+*One 50 mm or 100 mm wafer
-*Small samples
+*Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide on the back)
 |-
-| style="background:LightGrey; color:black"|Substrate material allowed
+| style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon
-*Silicon oxides
+A carrier is always needed: For III-V materials and metals a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used
-*Silicon nitrides
+*Silicon
-*Quartz
+*Silicon oxide
+*Silicon nitride
+*Fused silica/quartz
 *Polysilicon
-*Titan
+*III-V materials (on graphite carrier, max 450 <sup>o</sup>C)
-*III-V materials (on graphite carrier)
+*Some metals - (on graphite carrier). Ask the Thin Film group for permission
-*Silicon wafers (new from the box or RCA cleaned)
-*In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group].
 |-
 |}