Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions

Latest revision as of 08:39, 10 May 2023

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EXPIRED - The APOX furnace has been removed from the cleanroom August 2019.

Apox furnace (D1)

The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075^oC. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.

This furnace is positioned in the III-V cleanroom area. Only Nanolab employees are allowed to operate the furnace.

The user manual, technical information and contact information can be found in LabManager:

APOX Furnace (D1)

Process knowledge

Oxidation: look at the Oxidation page

Overview of the performance of the Apox furnace and some process related parameters

Purpose	Oxidation and annealing	Oxidation: Wet: With bubbler (water steam + O₂)
Performance	Film thickness	Wet oxide: Thicker than > 5 µm (APOX layers)
Process parameter range	Process Temperature	1075 ^oC
	Process pressure	1 atm
	Gas flows	N₂: 0-10 slm O₂: 0-10 slm
Substrates	Batch size	1-200 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new from the box)

@@ Line 1: / Line 1: @@
-==D1 Furnace Apox==
+'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_APOX click here]'''
-[[Image:D1.JPG|thumb|300x300px|D1 Furnace Apox: positioned in cleanroom ?]]
-D1 Furnace Apox is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated production of apox wafers which is a very thick thermal oxide grown at 1150 <sup>o</sup>C. Running a batch of apox wafers (oxide>5µm) can take several weeks.
+''This page is written by DTU Nanolab  internal''
+===<span style="color:Red">EXPIRED - The APOX furnace has been removed from the cleanroom August 2019.</span>===
+[[Category: Equipment |Thermal APOX]]
+[[Category: Thermal process|APOX]]
+[[Category: Furnaces|APOX]]
+==Apox furnace (D1)==
+[[Image:APOX.JPG|thumb|300x300px|Apox furnace (D1): positioned in the A-5 room/ Photo: DTU Nanolab internal]]
+The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075<sup>o</sup>C. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.
+This furnace is positioned in the III-V cleanroom area. Only Nanolab employees are allowed to operate the furnace.
+'''The user manual, technical information and contact information can be found in LabManager:'''
+'''[http://www.labmanager.dtu.dk/function.php?module=Machine&view=view&mach=159 APOX Furnace (D1)]'''
-This furnace is positioned in III-V cleanroom. The furnaces are the cleanest process chambers in the cleanroom. Only new wafers from the box enters this furnace.
 ==Process knowledge==
@@ Line 10: / Line 28: @@
-==Overview of the performance of Apox furnace and some process related parameters==
+==Overview of the performance of the Apox furnace and some process related parameters==
-{| border="2" cellspacing="0" cellpadding="10"
+{| border="2" cellspacing="0" cellpadding="2"
 |-
-!style="background:silver; color:black;" align="left"|Purpose
+!style="background:silver; color:black;" align="center"|Purpose
-|style="background:LightGrey; color:black"|Oxidation and annealing
+|style="background:LightGrey; color:black"|
+Oxidation and annealing
 |style="background:WhiteSmoke; color:black"|Oxidation:
-*Wet: with bubbler (water steam + N<sub>2</sub>)
+*Wet: With bubbler (water steam + O<sub>2</sub>)
 |-
-!style="background:silver; color:black" align="left"|Performance
+!style="background:silver; color:black" align="center"|Performance
 |style="background:LightGrey; color:black"|Film thickness
 |style="background:WhiteSmoke; color:black"|
-*Wet SiO<sub>2</sub>: used for layer thickness >5µm
+*Wet oxide: Thicker than > 5 µm (APOX layers)
 |-
-!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
+!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*1150 <sup>o</sup>C
+*1075 <sup>o</sup>C
 |-
 |style="background:LightGrey; color:black"|Process pressure
@@ Line 35: / Line 54: @@
 |style="background:LightGrey; color:black"|Gas flows
 |style="background:WhiteSmoke; color:black"|
-*N<sub>2</sub>:? sccm
+*N<sub>2</sub>: 0-10 slm
+*O<sub>2</sub>: 0-10 slm
 |-
-!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
+!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|