Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions
New page: Chromium can be deposited by e-beam evaporation. It should be noted that Chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the differe... |
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== Studies of Cr deposition processes == | |||
[[/Deposition of Chromium|Uniformity of Cr layers]] - ''Uniformity of Cr layers deposited with different methods and settings'' | |||
[[/Sputtering of Cr in Wordentec|Sputtering of Cr in Wordentec]] - ''Settings and deposition rates'' | |||
[[/Sputtering of Cr in Sputter System (Lesker)|Sputtering of Cr in Sputter system (Lesker)]] - ''Settings and deposition rates'' | |||
[[/Sputtering of Cr in Cluster Lesker PC1|Sputtering of Cr in Sputter-system Metal-Oxide (PC1)]] - ''Settings and deposition rates'' | |||
[[/Sputtering of Cr in Cluster Lesker PC3|Sputtering of Cr in Sputter-system Metal-Nitride (PC3)]] - ''Settings and deposition rates'' | |||
[[/Thermal evaporation of Cr in Thermal evaporator|Thermal evaporation of Cr in Thermal evaporator]] - ''Settings and deposition results'' | |||
[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cr:_High_tensile_stress|Stress in sputtered Cr films]] - ''Extremely high tensile stress in Cr films deposited at high temperature'' | |||
== Chromium deposition == | |||
Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment. | |||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
! | |||
! E-beam evaporation ( | |-style="background:silver; color:black" | ||
! | |||
! E-beam evaporation (Wordentec) | ! E-beam evaporation E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! E-beam evaporation and sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | |||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]]) | |||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]]) | |||
! Sputter deposition ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|(Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ]]) | |||
|- | |- | ||
| | |-style="background:WhiteSmoke; color:black" | ||
! General description | |||
|E-beam deposition of Chromium | |||
|E-beam and sputter deposition of Chromium | |||
|Thermal deposition of Chromium | |||
|Sputter deposition of Chromium | |||
|Sputter deposition of Chromium | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
! Pre-clean | |||
|Ar ion gun (only in E-beam evaporator Temescal) | |||
|RF Ar clean | |||
| | | | ||
* | |RF Ar clean | ||
|RF Ar clean | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
! Layer thickness | |||
|10Å to 1µm* | |||
|10Å to 1µm* | |||
|80 nm | |||
|at least up to 200 nm | |||
|at least up to 200 nm | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
! Deposition rate | |||
|1 Å/s to 10 Å/s | |||
|1 Å/s to 10 Å/s (e-beam) | |||
Sputtering: Depends on process parameters. See [[Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec|here]] and process log. | |||
|1 Å/s | |||
|Depends on [[/Sputtering of Cr in Sputter System (Lesker)|process parameters]]. At least up to 1.48 Å/s. See process log. | |||
|Depends on process parameters. | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
! Batch size | |||
| | | | ||
* | *4x6" wafers or | ||
* | *3x8" wafers (ask for holder) | ||
*Many smaller pieces | |||
| | | | ||
*24x2" wafers or | *24x2" wafers or | ||
*6x4" wafers or | *6x4" wafers or | ||
*6x6" wafers | *6x6" wafers | ||
| | |||
*4x 2" wafer or | |||
*1x 4" wafers or | |||
*1x6" wafer or | |||
*Several smaller pieces | |||
*In theory up to 8" wafer (or 2x4" wafer) but uniformity will be bad | |||
| | |||
*1x6" wafers | |||
*Smaller pieces/wafers | |||
| | |||
*up to 10x4" wafers or | |||
*up to 10x6" wafers or | |||
* many smaller samples | |||
|- | |- | ||
| | |-style="background:LightGrey; color:black" | ||
| | ! Allowed materials | ||
| | | | ||
| | Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]. | ||
| | |||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet]. | |||
| | |||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet]. | |||
| | |||
* Silicon wafers | |||
* and almost any | |||
| | |||
*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3] | |||
* Special carrier for III-V materials. | |||
|- | |- | ||
| | |-style="background:WhiteSmoke; color:black" | ||
| | ! Comment | ||
| | | Takes approx. 20 min to pump down | ||
| | | Takes approx. 1 hour to pump down | ||
| Takes approx. 20 min to pump down | |||
| | |||
| Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber | |||
|- | |- | ||
| | |} | ||
'''*''' ''For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material.'' | |||
Latest revision as of 14:26, 19 January 2024
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Studies of Cr deposition processes
Uniformity of Cr layers - Uniformity of Cr layers deposited with different methods and settings
Sputtering of Cr in Wordentec - Settings and deposition rates
Sputtering of Cr in Sputter system (Lesker) - Settings and deposition rates
Sputtering of Cr in Sputter-system Metal-Oxide (PC1) - Settings and deposition rates
Sputtering of Cr in Sputter-system Metal-Nitride (PC3) - Settings and deposition rates
Thermal evaporation of Cr in Thermal evaporator - Settings and deposition results
Stress in sputtered Cr films - Extremely high tensile stress in Cr films deposited at high temperature
Chromium deposition
Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.
E-beam evaporation E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) | E-beam evaporation and sputter deposition (Wordentec) | Thermal evaporation (Thermal evaporator) | Sputter deposition (Lesker sputterer) | Sputter deposition ((Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ) | |
---|---|---|---|---|---|
General description | E-beam deposition of Chromium | E-beam and sputter deposition of Chromium | Thermal deposition of Chromium | Sputter deposition of Chromium | Sputter deposition of Chromium |
Pre-clean | Ar ion gun (only in E-beam evaporator Temescal) | RF Ar clean | RF Ar clean | RF Ar clean | |
Layer thickness | 10Å to 1µm* | 10Å to 1µm* | 80 nm | at least up to 200 nm | at least up to 200 nm |
Deposition rate | 1 Å/s to 10 Å/s | 1 Å/s to 10 Å/s (e-beam)
Sputtering: Depends on process parameters. See here and process log. |
1 Å/s | Depends on process parameters. At least up to 1.48 Å/s. See process log. | Depends on process parameters. |
Batch size |
|
|
|
|
|
Allowed materials |
Almost any that does not degas. See the cross-contamination sheet. |
Almost any that does not degas. See the cross-contamination sheet. |
Almost any that does not degas. See the cross-contamination sheet. |
|
|
Comment | Takes approx. 20 min to pump down | Takes approx. 1 hour to pump down | Takes approx. 20 min to pump down | Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber |
* For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material.