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=Aligner: Maskless 04=
=Aligner: Maskless 04=
[[Image:Heidelberg_uMLA.JPG|400px|thumb|Aligner: Maskless 04 is located in PolyFabLab in building 347.]]
[[File:Heidelberg_uMLA.JPG|400px|thumb|Aligner: Maskless 04 is located in PolyFabLab in building 347.]]


'''Tool description'''<br>
The logon password for the PC is "mla" (without quotation marks).
The logon password for the PC is "mla" (without quotation marks).


The µMLA Tabletop Maskless Aligner from Heidelberg, located in PolyFabLab in building 347, is a direct exposure lithography tool installed in 2024.
The Aligner: Maskless 04 (µMLA) is a UV exposure tool, which can be used for direct writing of digital mask designs, in photosensitive resists coated on chips, 50 mm, 100 mm, or 150 mm substrates. The aligner has two exposure modes; Raster mode by stepping a write field across the substrate using a DMD and the 365 nm LED source, and Vector mode by direct writing using a focused laser beam from the 405 nm diode laser source.
It is a UV exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of a mask.
The system offers top side alignment with good accuracy.


Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design]].
The µMLA Tabletop Maskless Aligner from Heidelberg, located in PolyFabLab in building 347, is a direct exposure lithography tool installed in 2024.  It is a UV exposure system, that exposes the patterns directly on photosensitive resists on chips, 50 mm, 100 mm, or 150 mm substrates, without prior fabrication of a mask. The system offers top side alignment with good accuracy.


The user manual and contact information can be found in LabManager:
{| class="wikitable"
! style="text-align:left" | Product:
| style="padding-left: 10px" | Heidelberg instruments µMLA Tabletop Maskless Aligner
|-
! style="text-align:left" | Year of purchase:   
| style="padding-left: 10px" | 2024
|-
! style="text-align:left" | Location:
| style="padding-left: 10px" | PolyFabLab
|}


Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=544 LabManager] - '''requires login'''
'''Features'''
<!--
*Optical Autofocus
==Exposure dose and defocus==
*Pneumatic Autofocus
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_04|Information on UV exposure dose]]
*Top side Alignment
-->
*Gray Scale Exposure
*Direct laser writing (vector mode exposure)
*DMD projection writing (raster mode exposure)


===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 04 processing|Process information]]===
'''User manual'''<br>
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Exposure_technology|Exposure technology]]
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=544 LabManager] - '''requires login'''
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Process_Parameters|Process parameters]]
<br clear="all" />
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Substrate_positioning|Substrate positioning]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Alignment|Alignment]]


==Equipment performance and process related parameters==
=Equipment performance and process related parameters=
 
{| class="wikitable"
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-
 
! scope=row style="text-align: left;" | Purpose
!style="background:silver; color:black;" align="center" width="60"|Purpose  
| Alignment and UV exposure
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure  
|-
|-
 
! scope=row style="text-align: left;" | Exposure modes
!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance
|  
 
*Projection (raster mode)
|style="background:LightGrey; color:black"|Exposure mode
*Direct laser writing (vector mode)
|style="background:WhiteSmoke; color:black" colspan="2"|
*Projection (Raster mode)
*Direct laser writing (Vector mode)
|-
|-
| style="background:LightGrey; color:black"|Exposure light
! scope=row style="text-align: left;" | Exposure light/filters
|style="background:WhiteSmoke; color:black" colspan="2"|
|  
*365nm (LED) for projection
*365 nm (LED) for projection
*405nm (diode laser) for direct laser writing
*405 nm (laser diode array) for direct laser writing
|-
|-
|style="background:LightGrey; color:black"|Focusing method
! scope=row style="text-align: left;" | Dynamic focusing method
|style="background:WhiteSmoke; color:black" colspan="2"|
| Pneumatic
Pneumatic or Optical
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
! scope=row style="text-align: left;" | Minimum resolution
|style="background:WhiteSmoke; color:black" colspan="2"|
| ~1 µm
Down to 1µm
|-
|-
|style="background:LightGrey; color:black"|Design formats
! scope=row style="text-align: left;" | Design file formats
|style="background:WhiteSmoke; color:black" colspan="2"|
|  
*GDS-II
*GDS-II
*CIF
*CIF
Line 62: Line 62:
*HIMT format
*HIMT format
|-
|-
|style="background:LightGrey; color:black"|Alignment modes
! scope=row style="text-align: left;" | Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
|  
Top side only, ±1µm
*Top side (TSA): ±1 µm
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Substrate size
|style="background:LightGrey; color:black"|Substrate size
|  
|style="background:WhiteSmoke; color:black" colspan="2"|
*Maximum writing area: 150 mm x 150 mm
* maximum writing area: 150x150 mm<sup>2</sup>
*Small pieces: 3 mm x 3 mm with optical autofocus
* 150 mm wafer
*50 mm wafers
* 100 mm wafer
*100 mm wafers
* 50 mm wafer
*150 mm wafers
* pieces down to 3x3 mm<sup>2</sup> with optical autofocus
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
|  
All PolyFabLab materials with sufficient stiffness and flatness.
*All PolyFabLab materials with sufficient stiffness and flatness
<br>Total height variation across the substrate must be less than ±80 µm - including wafer bow
*Total height variation across the substrate must be less than ±80 µm - including wafer bow
|-
|-
|style="background:LightGrey; color:black"|Batch
! scope=row style="text-align: left;" | Substrate batch
|style="background:WhiteSmoke; color:black" colspan="2"|
| 1
1  
|-
|}
|}
<br clear="all" />
 
=[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 04 processing|Process information]]=
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Process_Parameters|Process parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Substrate_positioning|Substrate positioning]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Alignment|Alignment]]
 
==Alignment mark design and locations==
[[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|Alignment mark design and locations]].
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA4"