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Specific Process Knowledge/Lithography/Development/UV developer: Difference between revisions

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=Process Information=
=Process Information=
*[[Specific Process Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing#General_Process_Information|General process information]]
*[[Specific Process Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing|General process information]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography_processing#Process recommendations|Process recommendations]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography_processing#Process recommendations|Process recommendations]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing#Standard Processes|Standard processes]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing#Standard Processes|Standard processes]]

Latest revision as of 12:28, 12 January 2026

Developer TMAH UV-lithography

Developer: TMAH UV-lithography is located in E-4.

Developer TMAH UV-lithography was released Q4 2014.

Link to information about developer chuck size and hotplate pin positions.

Training video


The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information

Equipment performance and process related parameters

Purpose

Development of

  • AZ nLOF
  • AZ MiR 701
  • AZ 5214E
  • AZ 4562
  • DUV resists
Developer

AZ 726 MIF

(2.38% TMAH in water)

Method Development

Puddle

Handling

Vacuum chuck

Process parameters Temperature

Room temperature

Agitation

Rotation

Rinse

DI water

Substrates Substrate size
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Silicon and glass substrates

Film or pattern of all except Type IV

Batch

1-25