Specific Process Knowledge/Lithography/UVExposure/aligner MLA2

Aligner: Maskless 02

Aligner: Maskless 02 is located in E-5.

MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023).

Special features

• Optical Autofocus
• Backside Alignment
• Basic Gray Scale Exposure
• Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
• High Aspect Ratio Mode for exposure of thick resists
• 200 x 200 mm exposure field
• Separate conversion PC

Link to information about alignment mark design.

Training videos

Equipment info in LabManager - requires login

Exposure dose and defocus

Information on UV exposure dose

Process information

• Exposure technology
• Process Parameters
• Features
• Alignment

Quality Control (QC)

Quality Control (QC) for Aligner: Maskless 02 (MLA2) - Dose and Defoc

The QC procedure for Aligner: Maskless 02 (MLA2) - requires login The newest QC data for Aligner: Maskless 02 (MLA2) - requires login QC Recipe: Dose and defocus test on 1.5µm AZ5214E Dose test Last QC value ± 20 mJ/cm2 (9 steps total) Defoc test Last QC value ± 8 (9 steps total) QC limits Aligner: Maskless 02 (MLA2) Dose none Defoc none Dose and defoc values are reported in the QC data sheet.

Quality Control (QC) for Aligner: Maskless 02 (MLA2) - Alignment

The QC procedure for Aligner: Maskless 02 (MLA2) - requires login The newest QC data for Aligner: Maskless 02 (MLA2) - requires login QC Recipe: Alignment accuracy test Topside alignment Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing. Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported. Backside alignment Expose an overlay design after automatic alignment to 4 backside alignment marks and applying scaling and shearing. Rotate the wafer 180° and repeat. Alignment accuracy in 9 points across a 100mm wafer is measured, half the average alignment error is reported. QC limits Aligner: Maskless 02 (MLA2) Topside alignment error >0.5µm Backside alignment error >1µm Camera offsets will be adjusted if alignment error is outside the limit.

Equipment performance and process related parameters

Purpose		Alignment and UV exposure
Performance	Exposure mode	Projection
	Exposure light	375 nm (laser diode arrays)
	Focusing method	Optical Pneumatic
	Minimum structure size	down to 1 µm
	Design formats	GDS-II CIF DXF Gerber HIMT format
	Alignment modes	Top side alignment, ±0.5µm Backside alignment, ±1.0µm Field alignment (chip-by-chip TSA), ±0.25µm (within 5x5mm2 area)
Substrates	Substrate size	maximum writing area: 200x200 mm2 200 mm wafer 150 mm wafer 100 mm wafer 50 mm wafer pieces down to 3x3 mm2 1)
	Allowed materials	All cleanroom materials Total height variation across the substrate must be less than ±90 µm - including wafer bow
	Batch	1

¹⁾ with optical autofocus