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Specific Process Knowledge/Lithography/UVExposure/aligner MLA1: Difference between revisions

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Created page with "== Aligner: Maskless 01 == 400px|thumb|Aligner: Maskless 01 is located in E-4. The logon password for the PC is "mla" (without quotation marks). The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017. It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask. The sys..."
 
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== Aligner: Maskless 01 ==
=Aligner: Maskless 01=
[[File:Heidelberg_MLA100.jpg|400px|thumb|Aligner: Maskless 01 is located in E-4.]]


[[Image:Heidelberg_MLA100.jpg|400px|thumb|Aligner: Maskless 01 is located in E-4.]]
'''Tool description'''<br>
The MLA1 is a UV exposure tool, which can be used for direct writing of digital mask designs, on photosensitive resists on chips, 50 mm and, 100 mm substrates. It is possible to load a 150 mm wafer, but the writable area is only 125 mm x 125 mm.


The logon password for the PC is "mla" (without quotation marks).
The MLA 100 Maskless Aligner is a direct exposure projection lithography tool. It has a 365 nm UV LED exposure light source, that exposes the patterns directly on photosensitive resists on chips, 50 mm, 100 mm, and 150 mm inch substrates. It uses digital mask files instead of physical shadow masks. The system offers top side alignment with high accuracy.


The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017.
{| class="wikitable"
It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask.
! style="text-align:left" | Product:
The system offers top side alignment with high accuracy.
| style="padding-left: 10px" | Heidelberg Instruments MLA100 Tabletop Maskless Aligner
 
Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design]].
 
The user manual and contact information can be found in LabManager:
 
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=422 LabManager] - '''requires login'''
 
===Exposure dose and defocus===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_01|Information on UV exposure dose]]
 
===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing|Process information]]===
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Process_Parameters|Process parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Substrate_positioning|Substrate positioning]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Alignment|Alignment]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner|Optimal use of the maskless aligner]]
 
===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 01 (MLA1) - Dose and Defoc'''
|-
|-
|
! style="text-align:left" | Year of purchase:   
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=422 The QC procedure for Aligner: Maskless 01 (MLA1)] - '''requires login'''<br>
| style="padding-left: 10px" | 2016
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=422 The newest QC data for Aligner: Maskless 01 (MLA1)] - '''requires login'''
{| {{table}}
| align="center" |  
{| border="1" cellspacing="1" cellpadding="2"  align="center"
 
! QC:
! Dose and defocus test on 1.5µm AZ5214E
! QC limits
|-
|Dose test
|
Step size is 5 mJ/cm<sup>2</sup><br>
Test range is last QC value ± 10 mJ/cm<sup>2</sup> (5 steps total)
|none
|-
|Defoc test
|
Step size is 1 defoc<br>
Test range is last QC value ± 4 (5 steps total)
|none
|-
|-
! style="text-align:left" | Location:
| style="padding-left: 10px" | Cleanroom E-4
|}
|}


|}
'''User manual'''<br>
|}
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=422 LabManager] - '''requires login'''
<br/>


{| border="1" cellspacing="2" cellpadding="2" colspan="3"
'''Tool training'''<br>
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 01 (MLA1) - Alignment'''
Training on the tool requires users to complete the [https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography#Lithography_Tool_Package_Training lithography TPT] followed by the online tool training and a hands-on authorization training.<br>
|-
<br clear="all" />
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=422 The QC procedure for Aligner: Maskless 01 (MLA1)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=422 The newest QC data for Aligner: Maskless 01 (MLA1)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"


! QC Recipe:
=Equipment performance and process related parameters=
! Alignment accuracy test
{| class="wikitable"
! QC limits
|-
|Topside alignment
|
Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing.<br>
Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported.
| Must be better than 1µm
|-
|}
| align="center" valign="top"|
|-
|-
|}
! scope=row style="text-align: left;" | Purpose
Camera offsets will be adjusted if alignment error is outside the limit.
| Alignment and UV exposure
|}
<br/>
 
=== Equipment performance and process related parameters ===
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
 
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure  
|-
|-
 
! scope=row style="text-align: left;" | Exposure modes
!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance
| Projection
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
Projection
|-
|-
| style="background:LightGrey; color:black"|Exposure light
! scope=row style="text-align: left;" | Exposure light/filters
|style="background:WhiteSmoke; color:black" colspan="2"|
| 365 nm (LED), 8 nm FWHM
365nm (LED), FWHM=8nm
|-
|-
|style="background:LightGrey; color:black"|Focusing method
! scope=row style="text-align: left;" | Dynamic focusing method
|style="background:WhiteSmoke; color:black" colspan="2"|
| Pneumatic
Pneumatic
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
! scope=row style="text-align: left;" | Minimum resolution
|style="background:WhiteSmoke; color:black" colspan="2"|
| ~1 µm
down to 1µm
|-
|-
|style="background:LightGrey; color:black"|Design formats
! scope=row style="text-align: left;" | Design file formats
|style="background:WhiteSmoke; color:black" colspan="2"|
|  
*'''GDS-II'''
*GDS-II
*CIF
*CIF
*DXF
*DXF
Line 122: Line 51:
*HIMT format
*HIMT format
|-
|-
|style="background:LightGrey; color:black"|Alignment modes
! scope=row style="text-align: left;" | Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
|  
Top side only, ±2µm (±1µm can be achieved)
*Top side (TSA): ±2 µm (can be achieved: ±1 µm)
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Substrate size
|style="background:LightGrey; color:black"|Substrate size
|  
|style="background:WhiteSmoke; color:black" colspan="2"|
*Maximum writing area: 125 mm x 125 mm
* maximum writing area: 125x125 mm<sup>2</sup>
*Small pieces: 5 mm x 5 mm
* 150 mm wafer
*50 mm wafers
* 100 mm wafer
*100 mm wafers
* 50 mm wafer
*150 mm wafers
* pieces down to 5x5 mm<sup>2</sup>
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
|  
All cleanroom materials
*All cleanroom allowed materials
<br>Total height variation across the substrate must be less than ±40 µm - including wafer bow
*Total height variation across the substrate must be less than ±40 µm - including wafer bow
|-
|-
|style="background:LightGrey; color:black"|Batch
! scope=row style="text-align: left;" | Substrate batch
|style="background:WhiteSmoke; color:black" colspan="2"|
| 1
1  
|-
|}
|}
<br clear="all" />
 
=[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing|Process information]]=
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Process_Parameters|Process parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Substrate_positioning|Substrate positioning]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Alignment|Alignment]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner|Optimal use of the maskless aligner]]
 
==Exposure dose==
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_01|Information on UV exposure dose]]
 
==Alignment mark design and locations==
[[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|Alignment mark design and locations]].
 
==Quality Control (QC)==
The purpose of the QC process is to check the optical performance and alignment accuracy of the maskless aligners. The optical performance is checked by making a dose/defocus test. The alignment accuracy is checked by making a global alignment test for topside alignment.
 
'''Dose/defoc limit:'''<br>
Deviations in the optical performance are not easily corrected, and is likely due to contaminated or damaged writehead. If either the dose or defoc changes, the tool is investigated for writehead contamination and/or damage.
 
'''Alignment accuracy accept limit:'''<br>
Must be within machine specifications, and should be adjusted if necessary. The alignment accuracy for MLA1 is ±1 µm.
 
'''Documentation:'''<br>
*[https://labmanager.dtu.dk/d4mb/show.php?dokId=11637&mach=422 The QC procedure for Aligner: MLA1] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=422 The newest QC data for Aligner: MLA1] - '''requires login'''
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA1"