Specific Process Knowledge/Lithography/MiR: Difference between revisions
mNo edit summary |
|||
| (2 intermediate revisions by one other user not shown) | |||
| Line 1: | Line 1: | ||
{{ | {{cc-nanolab}} | ||
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/MiR click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/MiR click here]''' | ||
| Line 21: | Line 21: | ||
==Exposure== | ==Exposure== | ||
'''Dehydration of resist film:'''<br> | '''Dehydration of resist film:'''<br> | ||
During exposure in the maskless aligners, MiR can be sensitive to dehydration by the air flow applied by the pneumatic auto-focus mechanism. This may lead to insufficient development, especially for small substrates. This problem can be alleviated by switching to the overview camera for a period of 1 minute before starting the exposure, or simply by parking the writehead away from the exposure location for 1 minute before starting the exposure. | During exposure in the maskless aligners, MiR can be sensitive to dehydration by the air flow applied by the pneumatic auto-focus mechanism. This may lead to insufficient development, especially for small substrates. This problem can be alleviated by switching to the overview camera for a period of 1 minute before starting the exposure, or simply by parking the writehead away from the exposure location for 1 minute before starting the exposure. Dehydration can also mess up a dose test, but this can be fixed by increasing the spacing between the individual doses, or even better by extending the test design to 40mm or more in the Y-direction (adding a very small structure in the design file, or increasing the upper boarder during conversion). | ||
The effect can also be reduced by increasing the soft bake. | The effect can also be reduced by increasing the soft bake. | ||
| Line 34: | Line 34: | ||
Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5 µm thick MiR resist film will be approximately 1.4 µm after PEB. | Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5 µm thick MiR resist film will be approximately 1.4 µm after PEB. | ||
<gallery style="text-align: center;" widths=450 heights=350> | |||
MIR_noPEB.jpg|1.5 µm AZ MIR 701 without PEB | |||
MIR_withPEB.jpg|1.5 µm AZ MIR 701 with PEB | |||
</gallery> | |||
==Development== | ==Development== | ||
'''Development speed:''' | '''Development speed:''' | ||
*Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min | *Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min | ||