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== Pattern Design ==
= Pattern Design =


For making a pattern on a substrate it is necessary to use a software tool to design the pattern layout. This counts for all kind of lithography and laser cutting. There are a number of different software tools that can be used, some of the more commonly used are:
For making a pattern on a substrate it is necessary to use a software tool to design the pattern layout. This counts for all kind of lithography and laser cutting. There are a number of different software tools that can be used, some of the more commonly used are:
   
   
* CleWin
* CleWin
* KLayout (free)
* KLayout (free) link: https://www.klayout.de/
* L-Edit
* L-Edit
* Autocad
* Autocad


At Nanolab we offer all users '''free access to CleWin 6''' for their mask layout. You can find more information on how to Install [[Specific Process Knowledge/Pattern Design/CleWin|CleWin 6]] on your local computer [[Specific Process Knowledge/Pattern Design/CleWin|here]].
At Nanolab we offer all users '''free access to CleWin 6''' for their mask layout. You can find more information on how to install CleWin 6 on your local computer [[Specific Process Knowledge/Pattern Design/CleWin|'''here''']].
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=== Layout file format===
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== Layout file format==
* For '''E-beam lithography''' you need to prepare a set of files (GDS, V30, sdf, jdf and mgn files). For details about how to prepare the files for E-beam lithography, please see [[Specific_Process_Knowledge/Lithography/EBeamLithography/FilePreparation#FilePreparation|File preparation]]. For details about how to make aligned E-beam patterns, please have at look at [[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#Design_of_global_marks_and_chip_marks|Design of global marks and chip marks]]
There are different file formats available and not all equipment can handle each of them.
 
* For '''UV-lithography''', you create a layout file with your design. The file format should preferably be CIF or GDS, though DXF, or GERBER is acceptable too. The electronic mask layout can be used directly in one of our [[Specific Process Knowledge/Lithography/UVExposure|Mask Less Aligners (MLAs)]] or you can have a physical mask produced based on the layout file for our [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|Mask Aligner]]. For more details see below [[Specific_Process_Knowledge/Pattern_Design#Mask_Ordering_and_Fabrication|Mask Fabrication for UV-lithography]].
* For '''laser cutting''' the layout file has to be saved as a DXF file that is uploaded to the equipment computer.  
* For '''DUV-lithography''', a physical mask, called "reticles", is required. The file format must be GDS. For more details concerning the design of reticles see [[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Reticle_Design|Reticle Design]].
 
* For '''E-beam lithography''', you need to prepare a set of files (GDS, V30, sdf, jdf and mgn files). For more details, please see [[Specific_Process_Knowledge/Lithography/EBeamLithography/FilePreparation#FilePreparation|File preparation]]. For details about how to make aligned E-beam patterns, please have at look at [[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#Design_of_global_marks_and_chip_marks|Design of global marks and chip marks]]
* For '''UV-lithography''' you create a layout file with your design. The file format should preferably be CIF or GDS. The electronic mask layout can be used directly in one of our [[Specific Process Knowledge/Lithography/UVExposure|Mask Less Aligners (MLAs)]] or you can have a physical mask produced based on the layout file. For more details see below [[Specific_Process_Knowledge/Pattern_Design#Mask_Ordering_and_Fabrication|Mask Fabrication for UV-lithography]].
* For '''Laser Cutting''' using our [Specific Process Knowledge/Back-end processing/Laser Micromachining Tool|Laser Micromachining Tool], the layout file must be saved as DXF file.
 
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* For '''DUV-lithography''' and DUV-lithography it is necessary to have physical masks (reticles) produced based on the layout file. The file format has to be GDS. For more details concerning the design of reticles see [[Specific_Process_Knowledge/Lithography/DUVStepperLithography#Process_information|Design of Reticles]].
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== Mask Design for UV-lithography ==
== Mask Design for UV-lithography ==
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* [[Media:Guide to mask making.pdf| Guide to mask making.pdf]]. Unfortunately this is quite old guide to mask design, but may be useful anyway. Note some links/e-mails etc. are not correct anymore and the mask specifications (CU/CD, DF/BF, RR/WR) are no longer valid.
* [[Media:Guide to mask making.pdf| Guide to mask making.pdf]]. Unfortunately this is quite old guide to mask design, but may be useful anyway. Note some links/e-mails etc. are not correct anymore and the mask specifications (CU/CD, DF/BF, RR/WR) are no longer valid.
* [[Media:Mask polarity and orientation.pdf| Mask polarity and orientation.pdf]]. This is an short guide how to specify the polarity and orientation of the mask when ordering as well as when used on our maskless aligners. Be aware that the specification of polarity and orientation when ordering at Compugraphics is not the same as when ordering at Delta Mask as we used to do.
* [[Media:Mask polarity and orientation.pdf| Mask polarity and orientation.pdf]]. This is an short guide how to specify the polarity and orientation of the mask when ordering as well as when used on our maskless aligners. Be aware that the specification of polarity and orientation when ordering at Compugraphics is not the same as when ordering at Delta Mask as we used to do.
 
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===Alignment marks===
===Alignment marks===
The following alignment marks are suggested to use on the Mask aligners for good pattern recognition. Pleased be adviced that they can be removed in KOH etching.
The following alignment marks are suggested to use on the Mask aligners for good pattern recognition. Pleased be adviced that they can be removed in KOH etching.
*Mask aligner:
*Mask aligner:
**[[Media:Alignmentkeys1.cif|Alignment marks 1 .cif]] (Right click and Use "save link as...") - ''You need the program "Clewin" to open this file''
**[[Media:Alignmentkeys1.cif|Alignment marks 1 (.cif)]] (Right click and Use "save link as...") - ''You need the program "Clewin" to open this file''
**[[Media:Alignmentkeys1.tdb|Alignment marks 1 .tdb]] - ''You need the program "L-Edit" to open this file''
**[[Media:Alignmentkeys1.tdb|Alignment marks 1 (.tdb)]] - ''You need the program "L-Edit" to open this file''
*Maskless aligner:
*Maskless aligner:
**[[Media:MLA AlignmentMarks simple.gds|Simple alignment marks (.gds)]]
**[[Media:MLA AlignmentMarks simple.gds|Simple alignment marks (.gds)]]
**[[Media:MLA alignmentMarks arrows.gds|Alignment marks with structures to assist in locating the marks during alignment (.gds)]]
**[[Media:MLA_alignmentMarks_arrows.cif|Alignment marks with structures to assist in locating the marks during alignment (.cif)]]
**[[Media:AlignmentMark KOH.gds|Alignment mark for multiple layers, Layer 1 for etch in KOH (.gds)]]
**[[Media:AlignmentMark_KOH.cif|Alignment mark for multiple layers, Layer 1 for etch in KOH (.cif)]]
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====Alignment marks location====
===Alignment marks location===
For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]]  
For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]]  
*The mask's alignment marks for 4inch process:
**For Back Side Alignment (BSA) alignment marks must be located  between -1,0 and +1,0 mm in vertical location from mask center (y=0-+1mm) and  exactly at 45mm in left and right in horizontal location (x=+-45mm).
**For Top Side Alignment (TSA) alignment marks must be located 35-45 mm in left and right in horizontal location and between -2 and +2 mm in vertical location.


*The mask's alignment marks for 6inch process:
*For Top Side Alignment (TSA) alignment marks should be located 35-80 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y)
**Both BSA and TSA must be located between -2,5 and +2,5 mm in vertical location from mask center and 60 mm in left and right in horizontal location.
*For Back Side Alignment (BSA) alignment marks should be located 15-45 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y)
**Please notice that if you plan to use the automatic alignment option the alignment marks must be displaced from y=0 to y=+/- 1,6mm.
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=== Alignment marks for E-beam lithography ===
=== Alignment marks for E-beam lithography ===
If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ#Design_of_global_marks_and_chip_marks here].
If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOLAlignment|to e-beam alignment here]]
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=== Helpful information for chip layout ===
=== Helpful information for chip layout ===
*[[Media:Gamma coater & developer chucks + hotplate pins.gds|Gamma coater & developer chucks + hotplate pins.gds]] Design file showing the size of the chucks and the position of the hotplate pins in the Gamma tools.
*[[Media:Gamma coater & developer chucks + hotplate pins.gds|Gamma coater & developer chucks + hotplate pins.gds]] Design file showing the size of the chucks and the position of the hotplate pins in the Gamma tools.
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== Mask Ordering and Fabrication ==
== Mask Ordering and Fabrication ==
Our standard mask supplier is [https://www.macdermidalpha.com/semiconductor-solutions/compugraphics Compugraphics]. They can provide 5" and 7" masks on soda lime glass or quartz. Minimum feature size can be 0.8µm, 1µm or 1.5µm which is reflected in the price. Read a short guide on[[Media:Mask Ordering Guide.pdf| how to order photomasks from Compugraphics]] here. Templates for the mask specifications for 5" and 7" masks respectively can be seen [[mask_spec| here.]]  
Our standard mask supplier is [https://www.macdermidalpha.com/semiconductor-solutions/compugraphics Compugraphics]. They can provide 5" and 7" masks on soda lime glass or quartz. Minimum feature size can be 0.8µm, 1µm or 1.5µm which is reflected in the price. Read a short guide on[[Media:Mask Ordering Guide.pdf| how to order photomasks from Compugraphics]] here. Templates for the mask specifications for 5" and 7" masks respectively can be seen [[/Mask Specifications| <b>here</b>.]]  


The masks have to be ordered in Procure. Nanolab cannot order the mask for you but we do offer a final check of the design and mask specifications before you place the order. You can find a guide on [[Media:Maskordering in Fusion.pdf| how to order and attach design files in procure]] here.
The masks have to be ordered in Procure. Nanolab cannot order the mask for you but we do offer a final check of the design and mask specifications before you place the order. You can find a guide on [[Media:Maskordering in Fusion.pdf| how to order and attach design files in procure]] here.
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Give each layer appropriate GDS number respectively CIF names before exporting the file. This is done by double click on the layers and fill out the window that pops up.   
Give each layer appropriate GDS number respectively CIF names before exporting the file. This is done by double click on the layers and fill out the window that pops up.   


We can also provide guidance regarding the mask design phase. Please contact the mask team for help and review, E-mail address can be found in [[LabAdviser#Contact_Information_for_the_DTU_Nanolab_(Cleanroom)|Contact Information for the DTU Nanolab]].
We can also provide guidance regarding the mask design phase. Please contact the [mailto:nanolabsupport@nanolab.dtu.dk | Fabrication Support Team] for help and review.


*[[Media:Maskordering in Fusion.pdf| How to order and attach design files in DTU Fusion]]
*[[Media:Maskordering in Fusion.pdf| How to order and attach design files in DTU Fusion]]
*[[mask_spec| Templates for 5" and 7" mask specifications]]
*[[/Mask Specifications| Templates for 5" and 7" Mask Specifications]]
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* [[file:dASEfeRIE.tdb | The L-Edit design file]]
* [[file:dASEfeRIE.tdb | The L-Edit design file]]


=== Masks for process development ===
'''Masks for process development'''


*[[Specific Process Knowledge/Pattern Design/Travka|Travka mask set (7 masks)]]
*[[Specific Process Knowledge/Pattern Design/Travka|Travka mask set (7 masks)]]
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