Specific Process Knowledge/Lithography/Development: Difference between revisions
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==Development Comparison Table== | ==Development Comparison Table== | ||
{| | {| class="wikitable" | ||
|- | |||
! | ! | ||
! [[Specific_Process_Knowledge/Lithography/Development#Manual_beaker_development_in_fumehood|Manual beaker development]] | |||
! [[Specific_Process_Knowledge/Lithography/Development#Developer: SU8 (Wet Bench)|Developer: SU8 (Wet bench)]] | |||
! [[Specific_Process_Knowledge/Lithography/Development#Developer: E-beam 02|Developer: E-beam 02]] | |||
! [[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual 02|Developer: TMAH Manual 02]] | |||
! [[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|Developer: TMAH UV-lithography]] | |||
! [[Specific_Process_Knowledge/Lithography/Development/DUV_developer#Developer:_TMAH_Stepper|Developer: TMAH Stepper]] | |||
|- | |- | ||
!style=" | ! scope=row style="text-align: left;" | Purpose | ||
| | |||
Fall-back option if you have a process, which is not compatible with the automatic, or semi-automatic, tools | |||
<span style="color:red">Requires individual risk assessment for TMAH development!</span> | |||
| | |||
Development of: | Development of: | ||
*SU-8 | *SU-8 | ||
| | |||
Development of: | Development of: | ||
*ZEP 520A | *ZEP 520A | ||
*AR-P 6200.xx (CSAR) | *AR-P 6200.xx (CSAR) | ||
| | |||
Development of: | Development of: | ||
*AZ nLOF | *AZ nLOF | ||
| Line 38: | Line 39: | ||
*AZ 4562 | *AZ 4562 | ||
*DUV resists | *DUV resists | ||
| | |||
Development of: | Development of: | ||
*AZ nLOF | *AZ nLOF | ||
| Line 46: | Line 47: | ||
*DUV resists | *DUV resists | ||
Post-exposure baking | Post-exposure baking | ||
| | |||
Development of: | Development of: | ||
*DUV resists | *DUV resists | ||
Post-exposure baking | Post-exposure baking | ||
|- | |- | ||
!style=" | ! scope=row style="text-align: left;" | Developer | ||
| | | Process dependent | ||
| mr-Dev 600 (PGMEA) | |||
| | |||
mr-Dev 600 (PGMEA) | |||
*ZED N-50 | *ZED N-50 | ||
*AR | *AR 600-50 | ||
| | | AZ 726 MIF (2.38% TMAH in water) | ||
AZ 726 MIF (2.38% TMAH in water) | | AZ 726 MIF (2.38% TMAH in water) | ||
| | | AZ 726 MIF (2.38% TMAH in water) | ||
AZ 726 MIF (2.38% TMAH in water) | |||
| | |||
AZ 726 MIF (2.38% TMAH in water) | |||
|- | |- | ||
!style=" | ! scope=row style="text-align: left;" | Method | ||
| | | Submersion | ||
| | | Submersion | ||
Submersion | | Puddle | ||
| | | Puddle | ||
| Puddle | |||
| | | Puddle | ||
Puddle | |||
| | |||
Puddle | |||
| | |||
Puddle | |||
|- | |- | ||
! scope=row style="text-align: left;" | Handling | |||
| | | | ||
Manual handling in beakers | |||
*Chip bucket | |||
*Single wafer carrier | *Single wafer carrier | ||
*Carrier for up to 5 wafers | |||
| | |||
*Chip bucket | *Chip bucket | ||
* | *Single wafer carrier | ||
*Carrier for up to 6 wafers | |||
*Vacuum | | | ||
*Vacuum-free edge-grip chucks for 50 mm, 100 mm & 150 mm, and 200 mm substrates | |||
*Chip chuck for chips & 2" substrates | *Chip chuck for chips & 2" substrates | ||
| | |||
*Vacuum | *Vacuum-free edge-grip chucks for 50 mm, 100 mm & 150 mm, and 200 mm substrates | ||
*Chip chuck for chips & 2" substrates | *Chip chuck for chips & 2" substrates | ||
| | | Vacuum chuck | ||
Vacuum chuck | | Vacuum chuck | ||
| | |||
Vacuum chuck | |||
|- | |- | ||
! scope=row style="text-align: left;" | Process temperature | |||
!style=" | | Room temperature | ||
| | | Room temperature | ||
| Room temperature | |||
| | | Room temperature | ||
Room temperature | | Room temperature | ||
| | | Room temperature | ||
Room temperature | |||
| | |||
Room temperature | |||
| | |||
Room temperature | |||
| | |||
Room temperature | |||
|- | |- | ||
! scope=row style="text-align: left;" | Process agitation | |||
| No agitation allowed | |||
| | | Magnetic stirrer | ||
Magnetic stirrer | | Rotation | ||
| | | Rotation | ||
Rotation | | Rotation | ||
| | | Rotation | ||
Rotation | |||
| | |||
Rotation | |||
| | |||
Rotation | |||
|- | |- | ||
! scope=row style="text-align: left;" | Process rinse | |||
| Process dependent | |||
| | | IPA | ||
IPA | | IPA | ||
| | | DI water | ||
IPA | | DI water | ||
| | | DI water | ||
DI water | |||
| | |||
DI water | |||
| | |||
DI water | |||
|- | |- | ||
!style=" | ! scope=row style="text-align: left;" | Substrate size | ||
| | |||
* Chips | |||
* 50 mm wafers | |||
* 100 mm wafers | |||
* 150 mm wafers | |||
| | |||
* Chips | * Chips | ||
* 50 mm wafers | * 50 mm wafers | ||
| Line 148: | Line 125: | ||
* 150 mm wafers | * 150 mm wafers | ||
* 200 mm wafers | * 200 mm wafers | ||
| | |||
* Chips (5mm to 2") | * Chips (5mm to 2") | ||
* 50 mm wafers | * 50 mm wafers | ||
* 100 mm wafers | * 100 mm wafers | ||
* 150 mm wafers | * 150 mm wafers | ||
* 200 mm wafers | |||
| | |||
* Chips (5mm to 2") | * Chips (5mm to 2") | ||
* 100 mm wafers | * 100 mm wafers | ||
* 150 mm wafers | * 150 mm wafers | ||
| | |||
* 100 mm wafers | * 100 mm wafers | ||
* 150 mm wafers | * 150 mm wafers | ||
* 200 mm wafers (may require tool change) | * 200 mm wafers (may require tool change) | ||
| | |||
* 100 mm wafers | * 100 mm wafers | ||
* 150 mm wafers | * 150 mm wafers | ||
* 200 mm wafers (may require tool change) | * 200 mm wafers (may require tool change) | ||
|- | |- | ||
! scope=row style="text-align: left;" | Allowed materials | |||
| All cleanroom approved materials | |||
| | |||
*Silicon and glass substrates | *Silicon and glass substrates | ||
*Film or pattern of all but Type IV | *Film or pattern of all but Type IV | ||
| | | All cleanroom approved materials | ||
All cleanroom approved materials | | | ||
*All cleanroom approved materials | *All cleanroom approved materials | ||
*Film or pattern of all types | *Film or pattern of all types | ||
| | |||
*Silicon and glass substrates | *Silicon and glass substrates | ||
* | *Films, or patterned films, of any material except type IV (Pb, Te) | ||
| | |||
*Silicon, III-V, and glass substrates | *Silicon, III-V, and glass substrates | ||
* | *Films, or patterned films, of any material except type IV (Pb, Te) | ||
|- | |- | ||
! scope=row style="text-align: left;" | Batch size | |||
| 1 - 5 | |||
| 1 - 6 | |||
| 1 | |||
| 1 | |||
| 1 - 25 | |||
| 1 - 25 | |||
|} | |||
<br clear="all" /> | <br clear="all" /> | ||
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<br clear="all" /> | <br clear="all" /> | ||
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==Manual beaker development in fumehood== | |||
Beaker development, in fume hood 09: UV development or fume hood 10: e-beam development, is a fall-back option if you have a process, which is not compatible with the automatic, or semi-automatic, tools. We always recommend using, or at least trying, the automatic and semi-automatic tools, instead of using manual beaker development. | |||
Manual beaker development is necessary for some processes, but should be avoided if possible, due to the fact that it is notoriously difficult to get a stable repeatable process - especially when multiple users are sharing the same process; everybody simply does things a bit different from each other, which leads to changes in the process outcome. Some processes have a very narrow process window, which makes them inherently sensitive to small changes in the development. The manual development also has a much greater chance of producing particles, both from the operator and the environment. | |||
Finally the safety of the operator is at a significantly higher risk, since any manual handling of chemicals carries the risk of accidental spills with it. This is especially problematic if the developer is TMAH based, where direct skin exposure of >1% TMAH on a few percent of the body must be treated as a life-threatening event. | |||
===Special rules for manual beaker development of TMAH=== | |||
*Automatic agitation methods are not allowed - this includes magnetic stirring or sonication | |||
*Manual agitation methods, which create large waves or turbulence in the development solution, are not allowed | |||
*Users must submit a risk assessment for any process requiring manual beaker development of TMAH based developers | |||
*Users requiring manual beaker development of TMAH based developers must additionally provide valid reasons for not using the already available automatic and semi-automatic tools | |||
===Standard manual beaker development procedure=== | |||
[[File:Beaker_development_v1.png|600px|thumb|Standard procedure for manual beaker development in fume hood:<br>1) Submerge exposed substrate into development solution<br>2) When timer ends, move substrate directly into Rinse 1<br>3) After a few seconds, move substrate into Rinse 2*<br>4) Remove developed substrate for drying<br>(*It is allowed to omit the Rinse 2 step)|right]] | |||
The standard procedure for manual beaker development in a fume hood is as follows: | |||
#Prepare development process | |||
#Perform development | |||
#Clean up | |||
'''Prepare development process''' | |||
*Write the chemical label, which must always be present in your chemical setup - your write your label <i>before</i> pouring the chemical | |||
*Find the beakers required for your process | |||
*Find the items required for holding/submerging your substrate during the process | |||
*Find carriers or other storage units for placing your substrate after the process has finished | |||
*Find a timer - make sure it works as you expect it to, before submerging your substrate into the development solution and discovering that the timer is in fact broken | |||
*Get some cleanroom wipes and keep them nearby, for wiping any drops spilled during handling | |||
*<span style="color:red">Do not cover too many of the exhaust holes in the fume hood table, as this will reduce the efficiency of the exhaust, which reduces safety</span> | |||
*<span style="color:red">Do not place your beakers too close to the fume hood sash, as this can make it difficult to efficiently extract the fumes escaping from the beakers, which reduces safety</span> | |||
'''Perform development''' | |||
#Put on the appropriate personal protection gear | |||
#Pour rinsing agent into Rinse 1 and Rinse 2 beakers - typically DI water or IPA | |||
#Pour development solution into development beaker | |||
#Place exposed substrate in the appropriate carrier | |||
#Set timer | |||
#Submerge substrate into development beaker | |||
#Start timer immediately | |||
#When timer is 5 seconds from ending, prepare to lift the substrate out of the development beaker | |||
#Lift substrate out of development beaker - it can help to lift it at a slight angle, to allow liquids to drain more easily from large surfaces | |||
#Submerge it immediately into Rinse 1 | |||
#Agitate up/down for at least a few seconds | |||
#Move substrate into Rinse 2* | |||
#Agitate slightly | |||
#The developed substrate can now be removed and dried | |||
(<nowiki>*</nowiki>It is allowed to omit the Rinse 2 step) | |||
'''Clean up''' | |||
*Pour Rinse 1 and Rinse 2 into appropriate waste: water goes into the sink, IPA goes into C-waste drain | |||
*Rinse beakers with the DI-water gun | |||
*Pour development solution into appropriate waste: solvent based developer goes into C-waste drain. <span style="color:red">NB! TMAH is an aqueous alkaline solution, which must never be mixed with solvents! TMAH waste goes into the dedicated TMAH waste container, stored in the chemical cabinet in E-4.</span> | |||
*If your developer solution is not TMAH based: | |||
**Rinse beaker 3 times, discard water into sink | |||
*If your developer solution is TMAH based: | |||
**Rinse beaker once with DI-water and discard this into the TMAH waste | |||
**Rinse beaker two more times, discarding the water into the sink | |||
*Hang all beakers to dry on the drying rack | |||
*Erase the chemical label text | |||
*Wipe any droplets on the fume hood surface | |||
*Discard any napkins/other trash in the bin inside the fume hood | |||
<br clear="all" /> | |||
==Developer: SU8 (Wet Bench)== | ==Developer: SU8 (Wet Bench)== | ||
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==Developer: TMAH Manual 02== | ==Developer: TMAH Manual 02== | ||
[[Image:IMG 2464.JPG| | [[Image:IMG 2464.JPG|400px|right|thumb|Developer: TMAH Manual 02 is located in E-4.]] | ||
Developer: TMAH Manual 02 is a manually operated, single substrate or chip puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in water with a small amount of wetting agent). The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, water rinse, and drying is performed automatically by the equipment. | Developer: TMAH Manual 02 is a manually operated, single substrate or chip puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in water with a small amount of wetting agent). The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, water rinse, and drying is performed automatically by the equipment. | ||
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==Developer TMAH UV-lithography== | ==Developer TMAH UV-lithography== | ||
[[Image:SUSS DEV.JPG| | [[Image:SUSS DEV.JPG|400px|right|thumb|Developer: TMAH UV-lithography is located in E-4.]] | ||
Developer TMAH UV-lithography was released Q4 2014. | Developer TMAH UV-lithography was released Q4 2014. | ||