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[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
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=Plasma Asher 2=
=Plasma Asher 2=
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[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
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=Plasma Asher 3: Descum=
=Plasma Asher 3: Descum=
Product name: Diener Pico Plasma Asher<br>
Year of purchase: 2014
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''


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The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).
The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).


'''Process parameters'''<br>
You can manipulate two different descum process development parameters: you can either change power or chamber pressure.


'''Ashing of  AZ MiR701 resist:'''<br>
==Power testing - AZ MiR 701==
You can use two different descum process developments: you can either change power settings or processing chamber pressure.
 
 
'''Testing different power settings:'''
[[image:AZMIR701_power_settings.png|400px|thumb|Descum results for different power settings]]
[[image:AZMIR701_power_settings.png|400px|thumb|Descum results for different power settings]]


'''Recipe settings:'''
'''Recipe settings:'''
*Resist: AZ MiR 701
*O2 flow: 5 sccm
*O2 flow: 5 sccm
*N2 flow: 0
*N2 flow: 0
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*Power: Varied
*Power: Varied


 
{| class="wikitable" style="text-align: center;"
'''Experiment parameters:'''
|+ style="caption-side: top; text-align: left;" | Experiment parameters
{| {{table}}
|-
| align="center" |
!  !! Forward/reverse !! C2/C1 !! Power
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Power
|-
|'''recipe 1''' || 50/0 || 52/31 || 50%
|-
|-
|'''recipe 2''' || 100/0 || 53/31 || 100%
| style="text-align: left;" | '''recipe 1''' || 50/0 || 52/31 || 50%
|-
|-
|'''recipe 3''' || 20/0 || 51/34 || 20%
| style="text-align: left;" | '''recipe 2''' || 100/0 || 53/31 || 100%
|-
|-
| style="text-align: left;" | '''recipe 3''' || 20/0 || 51/34 || 20%
|}
|}
|}
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<hr>


'''Testing different pressure settings:'''
==Pressure testing - AZ MiR 701==
[[image:AZMIR701_pressure_settings.png|400px|thumb|Descum results for different pressure settings]]
[[image:AZMIR701_pressure_settings.png|400px|thumb|Descum results for different pressure settings]]


'''Recipe settings:'''
'''Recipe settings:'''
*Resist: AZ MiR 701
*O2 flow: varied
*O2 flow: varied
*N2 flow: 0
*N2 flow: 0
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*Power: V100% (100 W)
*Power: V100% (100 W)


 
{| class="wikitable" style="text-align: center;"
'''Experiment parameters:'''
|+ style="caption-side: top; text-align: left;" | Experiment parameters
{| {{table}}
|-
| align="center" |
!  !! Forward/reverse !! C2/C1 !! Oxygen !! Pressure
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 5 || 0,2
|-
|-
|'''recipe 2''' || 100/0 || 37/38 || 45 || 0,8
| style="text-align: left;" | '''recipe 1''' || 100/0 || 52/31 || 5 || 0.2
|-
|-
| style="text-align: left;" | '''recipe 2''' || 100/0 || 37/38 || 45 || 0.8
|}
|}
|}
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<hr>


'''Ashing of AZ5214E resist:'''
==Pressure testing - AZ 5214E==
[[image:AZ5214E_pressure_settings.png|400px|thumb|Descum results for different pressure settings]]
[[image:AZ5214E_pressure_settings.png|400px|thumb|Descum results for different pressure settings]]


'''Recipe settings:'''
'''Recipe settings:'''
*Resist: AZ 5214E
*O2 flow: varied
*O2 flow: varied
*N2 flow: 0
*N2 flow: 0
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*Power: V100% (100 W)
*Power: V100% (100 W)


 
{| class="wikitable" style="text-align: center;"
'''Experiment parameters:'''
|+ style="caption-side: top; text-align: left;" | Experiment parameters
{| {{table}}
|-
| align="center" |
!  !! Forward/reverse !! C2/C1 !! Oxygen !! Pressure
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 17 || 0,4
|-
|-
|'''recipe 2''' || 100/0 || 37/39 || 45 || 0,8
| style="text-align: left;" | '''recipe 1''' || 100/0 || 52/31 || 17 || 0.4
|-
|-
| style="text-align: left;" | '''recipe 2''' || 100/0 || 37/39 || 45 || 0.8
|}
|}
|}
 
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=Plasma Asher 4=
=Plasma Asher 4=
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024
Descum of AZ 5214E on 100 mm wafers. The descum process development was done for a single substrate, as well as 3 substrates (for decreased ashing rate and improved ashing uniformity). The substrates were placed vertically in the glass boat.
Descum of AZ 5214E on 100 mm wafers. The descum process development was done for a single substrate, as well as 3 substrates (for decreased ashing rate and improved ashing uniformity). The substrates were placed vertically in the glass boat.
<gallery style="text-align: center;" widths=250 heights=250>
PA_boat_1Wafer_v2.png|Single vertical substrate
PA_boat_3Wafer_v2.png|3 vertical substrates:<br>Dummy - Test - Dummy
</gallery>


For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers. The wafers were placed in consecutive slots - when running multiple wafers in this way, the first and last wafers should always be dummy wafers.
For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers. The wafers were placed in consecutive slots - when running multiple wafers in this way, the first and last wafers should always be dummy wafers.
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*Pressure (DSC): 1.3 mbar
*Pressure (DSC): 1.3 mbar
*Power: 200 W
*Power: 200 W
*Chamber temperature at start: 30°C
*Chamber temperature at start (with door closed): 30°C
*Time (single wafer): 5-10 minutes = 35-72 nm ashed
*Time (single wafer): 5-10 minutes = 35-72 nm ashed
*Time (multiple wafers): 10-15 minutes = 40-80 nm ashed
*Time (multiple wafers): 10-15 minutes = 40-80 nm ashed
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{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Center of 3 substrates
! !! Single substrate !! Center of 3 substrates
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results: ashing rate
| Ashing rate: 5.7 ±2.1 nm/min<br>Non-uniformity: 0.6 ±0.4% || Ashing rate: 3.8 ±1.6 nm/min<br>Non-uniformity: 0.4 ±0.2%
| 5.7 ±2.1 nm/min|| 3.8 ±1.6 nm/min
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Test results: non-uniformity
| 0.6 ±0.4% || 0.4 ±0.2%
|-
! scope=row style="text-align: left;" | Wafers  
| 1 || 3  
| 1 || 3  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm  
| 100 mm || 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber  
| Center of chamber || Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat  
| Center of boat || Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm || 200 sccm
| 200 sccm || 200 sccm
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 50% N<sub>2</sub> || 50% N<sub>2</sub>
| 50% N<sub>2</sub> || 50% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar || 1.3 mbar
| 1.3 mbar || 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 200 W || 200 W  
| 200 W || 200 W  
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| Tested parameter || Tested parameter
| Tested parameter || Tested parameter
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 33°C || 33°C  
| 33°C || 33°C  
|}
|}
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==Single wafer ashing rate an uniformity==
==Single wafer descum ashing rate and uniformity for plasma asher 4 & 5==
[[File:PA_descum_single_v3.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]]
[[File:PA_descum_single_v3.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]]


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==Multi wafer ashing rate and uniformity==
==Multi wafer descum ashing rate and uniformity for plasma asher 4 & 5==
[[File:PA_descum_multi_v3.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]]
[[File:PA_descum_multi_v3.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]]


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==Comparison between single substrate processing and multi substrate processing==
==Comparison between single substrate processing and multi substrate processing for plasma asher 4 & 5==
Processing a single substrate using the standard descum settings will provide users with a relatively controllable and uniform process. Adding dummy substrates in close proximity with the process substrate will reduce the ashing rate and improve the uniformity:
Processing a single substrate using the standard descum settings will provide users with a relatively controllable and uniform process. Adding dummy substrates in close proximity with the process substrate will reduce the ashing rate and improve the uniformity:
<gallery mode="packed-hover" heights="150">
<gallery mode="packed-hover" heights="150">
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==Comparison of ashing rate between substrate sizes==
It is assumed that the low power descum rates, for different substrate sizes, follows the same pattern as the high power ashing rates, which can be seen [[Specific_Process_Knowledge/Lithography/Strip#Comparison_of_ashing_rate_between_substrate_sizes_for_plasma_asher_4_&_5|here]].


=Plasma Asher 5=
=Plasma Asher 5=
Plasma asher 5 is identical to plasma asher 4, see descum processing for plasma asher 4 [[Specific_Process_Knowledge/Lithography/Descum#Descum_processing_in_plasma_asher_4_&_5|here]].
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024
 
Plasma asher 5 is identical to plasma asher 4, see descum processing for plasma asher 4 [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|here]].
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