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__TOC__
__TOC__


=Plasma Asher 1=
= Descum Comparison Table =
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
 
=Plasma Asher 2=
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
 
=Plasma Asher 3: Descum=
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
 
Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time.
The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).
 
 
'''Ashing of  AZ MiR701 resist:'''<br>
You can use two different descum process developments: you can either change power settings or processing chamber pressure.
 
 
'''Testing different power settings:'''
[[image:AZMIR701_power_settings.png|640px|thumb|Descum results for different power settings]]
 
'''Recipe settings:'''
*O2 flow: 5 sccm
*N2 flow: 0
*Pressure: 0.2 mbar
*Power: Varied
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Power
|-
|'''recipe 1''' || 50/0 || 52/31 || 50%
|-
|'''recipe 2''' || 100/0 || 53/31 || 100%
|-
|'''recipe 3''' || 20/0 || 51/34 || 20%
|-
|}
|}
<br clear="all" />
 
 
'''Testing different pressure settings:'''
[[image:AZMIR701_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]
 
'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 5 || 0,2
|-
|'''recipe 2''' || 100/0 || 37/38 || 45 || 0,8
|-
|}
|}
<br clear="all" />
 
'''Ashing of AZ5214E resist:'''
[[image:AZ5214E_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]
 
 
'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 17 || 0,4
|-
|'''recipe 2''' || 100/0 || 37/39 || 45 || 0,8
|-
|}
|}
<br clear="all" />
 
=Plasma Asher 4=
==Descum processing in plasma asher 4 & 5==
Descum of AZ 5214E on 100 mm wafers. The descum process was tested for single substrates, as well as 3 substrates, placed vertically in the glass boat. For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers.
 
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
 
{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Center of 3 substrates
!
! [[Specific_Process_Knowledge/Lithography/Descum/plasmaAsher03|Plasma Asher 3: Descum]]
! [[Specific_Process_Knowledge/Lithography/Descum/plasmaAsher04|Plasma Asher 4 (Clean)]]
! [[Specific_Process_Knowledge/Lithography/Descum/plasmaAsher05|Plasma Asher 5 (Dirty)]]
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Purpose
| Ashing rate: 5.7 ±2.1 nm/min<br>Non-uniformity: 0.6 ±0.4% || Ashing rate: 3.8 ±1.6 nm/min<br>Non-uniformity: 0.4 ±0.2%
| Resist descum
|
*Resist stripping
*Resist descum
|
*Resist stripping
*Resist descum
|-
|-
! scope=row| Wafers
! scope=row style="text-align: left;" | Method
| 1 || 3
| Plasma ashing
| Plasma ashing
| Plasma ashing
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Process gasses
| 100 mm || 100 mm
| O<sub>2</sub> (50 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub> (0-200 sccm)
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Process power
| Center of chamber || Center of chamber
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Substrate batch
| Center of boat || Center of boat
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Substrate materials
| 200 sccm || 200 sccm
|
|-
*<span style="color:red">'''No polymer substrates'''</span><br>
! scope=row| Gas mix ratio
*Silicon substrates
| 50% N<sub>2</sub> || 50% N<sub>2</sub>
*III-V substrates
|-
*Glass substrates
! scope=row| Chamber pressure
*Films, or patterned films, of any material except type IV (Pb, Te)
| 1.3 mbar || 1.3 mbar
|
|-
*<span style="color:red">'''No metals'''</span><br>
! scope=row| Power
*<span style="color:red">'''No metal oxides'''</span><br>
| 200 W || 200 W
*<span style="color:red">'''No III-V materials'''</span><br>
|-
*Silicon substrates
! scope=row| Test processing time
*Glass substrates
| Tested parameter || Tested parameter
*Polymer substrates
|-
*Films, or patterned films, of resists/polymers
! scope=row| Test average temperature
|
| 33°C || 33°C
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}


<br clear="all" />
=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


[[File:PA_descum_single_v2.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]]
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
'''Single wafer processing'''<br>
{| class="wikitable"
|-
! Ashing time [min] !! 1 !! 2 !! 5 !! 10 !! 15
|-
| Ashing amount [nm] || 5.2 || 6.2 || 35.1 || 72.3 || 87.1
|-
| Ashing rate [nm/min] || 5.2 || 3.1 || 7.0 || 7.2 || 5.8
|-
| Film thickness range, before descum [nm] || 11 || 12 || 10 || 11 || 9
|-
| Pre-ashing non-uniformity [%] || 0.37 || 0.40 || 0.33 || 0.37 || 0.30
|-
| Film thickness range, after descum [nm] || 10 || 10 || 12 || 19 || 33
|-
| Post-ashing non-uniformity [%] || 0.33 || 0.33 || 0.41 || 0.66 || 1.18
|}


<br clear="all" />


[[File:PA_descum_multi_v2.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]]
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
'''Multi wafer processing'''<br>
{| class="wikitable"
|-
! Ashing time [min] !! 1 !! 2 !! 5 !! 10 !! 15
|-
| Ashing amount [nm] || 4.3 || 6.7 || 10.1 || 39.5 || 78.8
|-
| Ashing rate [nm/min] || 4.3 || 3.4 || 2.0 || 4.0 || 5.3
|-
| Film thickness range, before descum [nm] || 11 || 13 || 11 || 12 || 14
|-
| Post-ashing non-uniformity [%] || 0.37 || 0.43 || 0.37 || 0.40 || 0.46
|-
| Film thickness range, after descum [nm] || 11 || 9 || 10 || 12 || 21
|-
| Post-ashing non-uniformity [%] || 0.37 || 0.30 || 0.33 || 0.41 || 0.74
|}


[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
<br clear="all" />
<br clear="all" />
=Plasma Asher 5=
<span style="color:red">Coming soon</span>

Latest revision as of 10:11, 25 June 2026

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

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Descum Comparison Table

Plasma Asher 3: Descum Plasma Asher 4 (Clean) Plasma Asher 5 (Dirty)
Purpose Resist descum
  • Resist stripping
  • Resist descum
  • Resist stripping
  • Resist descum
Method Plasma ashing Plasma ashing Plasma ashing
Process gasses O2 (50 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • CF4 (0-200 sccm)
Process power 10-100 W (10-100%) 150-1000 W 150-1000 W
Substrate batch
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
Substrate materials
  • No polymer substrates
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • No III-V materials
  • Silicon substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)

Decommisioned tools

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.


Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

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