Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142: Difference between revisions
New page: == The nano1.42 recipe == {| border="2" cellpadding="2" cellspacing="1" |+ '''Recipe nano1.42''' |- ! rowspan="6" align="center"| Recipe | Gas | C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<su... |
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== The nano1.42 recipe == | == The nano1.42 recipe == | ||
{{Template:Author-jmli1}} | |||
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<gallery caption="The results of the nano1. | <gallery caption="The results of the nano1.42 recipe" widths="250" heights="200" perrow="3"> | ||
image:WF_2E08a_23mar2011-030.jpg|The 30 nm trenches | image:WF_2E08a_23mar2011-030.jpg|The 30 nm trenches | ||
image:WF_2E08a_23mar2011-060.jpg|The 60 nm trenches | image:WF_2E08a_23mar2011-060.jpg|The 60 nm trenches | ||
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C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 40 W PP, -20 degs, 120 secs | C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 40 W PP, -20 degs, 120 secs | ||
</gallery> | </gallery> | ||
{| {{table}} | |||
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | |||
| align="center" style="background:#f0f0f0;"|'''''' | |||
| align="center" style="background:#f0f0f0;"|'''30''' | |||
| align="center" style="background:#f0f0f0;"|'''60''' | |||
| align="center" style="background:#f0f0f0;"|'''90''' | |||
| align="center" style="background:#f0f0f0;"|'''120''' | |||
| align="center" style="background:#f0f0f0;"|'''150''' | |||
| align="center" style="background:#f0f0f0;"|'''Average''' | |||
| align="center" style="background:#f0f0f0;"|'''Std. dev.''' | |||
|- | |||
| Etch rates||nm/min||148||158||164||167||166||160||8 | |||
|- | |||
| Sidewall angle||degs||90||90||90||90||90||90||0 | |||
|- | |||
| CD loss||nm/edge||7||-7||-7||-28||-28||-13||15 | |||
|- | |||
| CD loss foot||nm/edge||12||5||6||-15||-1||1||10 | |||
|- | |||
| Bowing||||-1||1||-2||-5||-7||-3||3 | |||
|- | |||
| Bottom curvature||||-46||-30||-29||-31||-27||-32||8 | |||
|- | |||
| zep||nm/min||||||||||||65|| | |||
|- | |||
| | |||
|} | |||
==Etching SRN (Silicon Rich Nitride) with nano1.42== | |||
''This test has been done by Leonid Beliaev'' <br> | |||
*274nm SRN by LPCVD ("6 inch LS" recipe) | |||
*Substrate: Si/SiO2(1100nm) | |||
*DUV-lithography: KRF M230Y resist 360 nm, Barc 65 nm, exposure dose 220J/m2 | |||
*Pattern: Grating with period 400 nm and grating bar width of | |||
*Barc etch in Pegasus 1 at -19 deg, 40s | |||
*Nano 1.42 at -19 deg, 5 min | |||
[[File:Etch_rate.png|400px]] | |||
[[File:Test_007.jpg|400px|left|thumb|Image: Leonid Beliaev]] |
Latest revision as of 10:22, 28 July 2023
Feedback to this page: click here
The nano1.42 recipe
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
Recipe | Gas | C4F8 75 sccm, SF6 38 sccm |
---|---|---|
Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | |
Power | 800 W CP, 40 W PP | |
Temperature | -20 degs | |
Hardware | 100 mm Spacers | |
Time | 120 secs | |
Conditions | Run ID | 2017 |
Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | |
Mask | 211 nm zep etched down to 82 nm |
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The 30 nm trenches
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The 60 nm trenches
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The 90 nm trenches
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The 120 nm trenches
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The 150 nm trenches
Nominal trench line width | ' | 30 | 60 | 90 | 120 | 150 | Average | Std. dev. |
Etch rates | nm/min | 148 | 158 | 164 | 167 | 166 | 160 | 8 |
Sidewall angle | degs | 90 | 90 | 90 | 90 | 90 | 90 | 0 |
CD loss | nm/edge | 7 | -7 | -7 | -28 | -28 | -13 | 15 |
CD loss foot | nm/edge | 12 | 5 | 6 | -15 | -1 | 1 | 10 |
Bowing | -1 | 1 | -2 | -5 | -7 | -3 | 3 | |
Bottom curvature | -46 | -30 | -29 | -31 | -27 | -32 | 8 | |
zep | nm/min | 65 | ||||||
Etching SRN (Silicon Rich Nitride) with nano1.42
This test has been done by Leonid Beliaev
- 274nm SRN by LPCVD ("6 inch LS" recipe)
- Substrate: Si/SiO2(1100nm)
- DUV-lithography: KRF M230Y resist 360 nm, Barc 65 nm, exposure dose 220J/m2
- Pattern: Grating with period 400 nm and grating bar width of
- Barc etch in Pegasus 1 at -19 deg, 40s
- Nano 1.42 at -19 deg, 5 min