Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12: Difference between revisions
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== The nano1.2 recipe == | == The nano1.2 recipe == | ||
{{Template:Author-jmli1}} | |||
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{| border="2" cellpadding="2" cellspacing="1" | {| border="2" cellpadding="2" cellspacing="1" | ||
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C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -10 degs, 120 secs | C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -10 degs, 120 secs | ||
</gallery> | </gallery> | ||
{| {{table}} | |||
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | |||
| align="center" style="background:#f0f0f0;"|'''''' | |||
| align="center" style="background:#f0f0f0;"|'''30''' | |||
| align="center" style="background:#f0f0f0;"|'''60''' | |||
| align="center" style="background:#f0f0f0;"|'''90''' | |||
| align="center" style="background:#f0f0f0;"|'''120''' | |||
| align="center" style="background:#f0f0f0;"|'''150''' | |||
| align="center" style="background:#f0f0f0;"|'''Avg''' | |||
| align="center" style="background:#f0f0f0;"|'''Std''' | |||
|- | |||
| Etch rates||nm/min||241||285||307||325||335||299||37 | |||
|- | |||
| Sidewall angle ||degs||92||92||92||91||91||92||0 | |||
|- | |||
| CD loss ||nm/edge||-5||-8||-18||-18||-34||-17||11 | |||
|- | |||
| CD loss foot||nm/edge||-5||-8||-18||-18||-4||-10||7 | |||
|- | |||
| Bowing||||19||11||11||14||10||13||4 | |||
|- | |||
| Curvature ||||-48||-46||-43||-40||-40||-44||4 | |||
|- | |||
| Zep etch rate||nm/min||||||||||||95|| | |||
|- | |||
| | |||
|} | |||
== Comments == | == Comments == | ||
Lower temperature certainly looks like a step in the right direction. Confirms that the process was too etch aggressive previously, hence the isotropic profiles. | Lower temperature certainly looks like a step in the right direction. Confirms that the process was too etch aggressive previously, hence the isotropic profiles. | ||
Latest revision as of 15:17, 2 February 2023
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The nano1.2 recipe
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
| Recipe | Gas | C4F8 38 sccm, SF6 52 sccm |
|---|---|---|
| Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | |
| Power | 800 W CP, 50 W PP | |
| Temperature | -10 degs | |
| Hardware | 100 mm Spacers | |
| Time | 120 secs | |
| Conditions | Run ID | 1817 |
| Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | |
| Mask | 343 nm zep etched down to 154 nm |
- The results of the nano1.2 recipe
-
The 30 nm trenches -
The 60 nm trenches -
The 90 nm trenches -
The 120 nm trenches -
The 150 nm trenches
| Nominal trench line width | ' | 30 | 60 | 90 | 120 | 150 | Avg | Std |
| Etch rates | nm/min | 241 | 285 | 307 | 325 | 335 | 299 | 37 |
| Sidewall angle | degs | 92 | 92 | 92 | 91 | 91 | 92 | 0 |
| CD loss | nm/edge | -5 | -8 | -18 | -18 | -34 | -17 | 11 |
| CD loss foot | nm/edge | -5 | -8 | -18 | -18 | -4 | -10 | 7 |
| Bowing | 19 | 11 | 11 | 14 | 10 | 13 | 4 | |
| Curvature | -48 | -46 | -43 | -40 | -40 | -44 | 4 | |
| Zep etch rate | nm/min | 95 | ||||||
Comments
Lower temperature certainly looks like a step in the right direction. Confirms that the process was too etch aggressive previously, hence the isotropic profiles.