Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141: Difference between revisions
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== The nano1.41 recipe == | == The nano1.41 recipe == | ||
{{Template:Author-jmli1}} | |||
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{| border="2" cellpadding="2" cellspacing="1" | {| border="2" cellpadding="2" cellspacing="1" | ||
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|- | |- | ||
| Mask | | Mask | ||
| | | 211 nm zep etched down to 10 nm | ||
|- | |- | ||
|} | |} | ||
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C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 75 W PP, -20 degs, 120 secs | C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 75 W PP, -20 degs, 120 secs | ||
</gallery> | </gallery> | ||
{| {{table}} | |||
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | |||
| align="center" style="background:#f0f0f0;"|'''''' | |||
| align="center" style="background:#f0f0f0;"|'''30''' | |||
| align="center" style="background:#f0f0f0;"|'''60''' | |||
| align="center" style="background:#f0f0f0;"|'''90''' | |||
| align="center" style="background:#f0f0f0;"|'''120''' | |||
| align="center" style="background:#f0f0f0;"|'''150''' | |||
| align="center" style="background:#f0f0f0;"|'''Average''' | |||
| align="center" style="background:#f0f0f0;"|'''Std. dev.''' | |||
|- | |||
| Etch rates||nm/min||155||161||164||171||179||166||9 | |||
|- | |||
| Sidewall angle||degs||91||90||90||90||90||90||1 | |||
|- | |||
| CD loss||nm/edge||-1||-11||-13||-36||-37||-20||16 | |||
|- | |||
| CD loss foot||nm/edge||4||1||0||-22||-10||-5||11 | |||
|- | |||
| Bowing||||5||2||5||4||1||3||2 | |||
|- | |||
| Bottom curvature||||-45||-40||-34||-29||-23||-34||9 | |||
|- | |||
| zep||nm/min||||||||||||101|| | |||
|- | |||
| | |||
|} | |||
Latest revision as of 16:16, 2 February 2023
Feedback to this page: click here
The nano1.41 recipe
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
| Recipe | Gas | C4F8 75 sccm, SF6 38 sccm |
|---|---|---|
| Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | |
| Power | 800 W CP, 75 W PP | |
| Temperature | -20 degs | |
| Hardware | 100 mm Spacers | |
| Time | 120 secs | |
| Conditions | Run ID | 2001 |
| Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | |
| Mask | 211 nm zep etched down to 10 nm |
- The results of the nano1.41 recipe
-
The 30 nm trenches -
The 60 nm trenches -
The 90 nm trenches -
The 120 nm trenches -
The 150 nm trenches
| Nominal trench line width | ' | 30 | 60 | 90 | 120 | 150 | Average | Std. dev. |
| Etch rates | nm/min | 155 | 161 | 164 | 171 | 179 | 166 | 9 |
| Sidewall angle | degs | 91 | 90 | 90 | 90 | 90 | 90 | 1 |
| CD loss | nm/edge | -1 | -11 | -13 | -36 | -37 | -20 | 16 |
| CD loss foot | nm/edge | 4 | 1 | 0 | -22 | -10 | -5 | 11 |
| Bowing | 5 | 2 | 5 | 4 | 1 | 3 | 2 | |
| Bottom curvature | -45 | -40 | -34 | -29 | -23 | -34 | 9 | |
| zep | nm/min | 101 | ||||||