Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141: Difference between revisions

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New page: == The nano1.41 recipe == {| border="2" cellpadding="2" cellspacing="1" |+ '''Recipe nano1.41''' |- ! rowspan="6" align="center"| Recipe | Gas | C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<su...
 
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141 click here]'''
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== The nano1.41 recipe ==
== The nano1.41 recipe ==
{{Template:Author-jmli1}}
<!--Checked for updates on 2/02-2023 - ok/jmli -->


{| border="2" cellpadding="2" cellspacing="1"  
{| border="2" cellpadding="2" cellspacing="1"  
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|-
|-
| Mask
| Mask
| nm zep etched down to 6dgh4 nm
| 211 nm zep etched down to 10 nm
|-  
|-  
|}
|}




<gallery caption="The results of the nano1.4 recipe" widths="250" heights="200" perrow="3">
<gallery caption="The results of the nano1.41 recipe" widths="250" heights="200" perrow="3">
image:WF_2E07b_mar23_2011-030.jpg|The 30 nm trenches
image:WF_2E07b_mar23_2011-030.jpg|The 30 nm trenches
image:WF_2E07b_mar23_2011-060.jpg|The 60 nm trenches
image:WF_2E07b_mar23_2011-060.jpg|The 60 nm trenches
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C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 75 W PP, -20 degs, 120 secs
C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 75 W PP, -20 degs, 120 secs
</gallery>
</gallery>
{| {{table}}
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''30'''
| align="center" style="background:#f0f0f0;"|'''60'''
| align="center" style="background:#f0f0f0;"|'''90'''
| align="center" style="background:#f0f0f0;"|'''120'''
| align="center" style="background:#f0f0f0;"|'''150'''
| align="center" style="background:#f0f0f0;"|'''Average'''
| align="center" style="background:#f0f0f0;"|'''Std. dev.'''
|-
| Etch rates||nm/min||155||161||164||171||179||166||9
|-
| Sidewall angle||degs||91||90||90||90||90||90||1
|-
| CD loss||nm/edge||-1||-11||-13||-36||-37||-20||16
|-
| CD loss foot||nm/edge||4||1||0||-22||-10||-5||11
|-
| Bowing||||5||2||5||4||1||3||2
|-
| Bottom curvature||||-45||-40||-34||-29||-23||-34||9
|-
| zep||nm/min||||||||||||101||
|-
|
|}

Latest revision as of 15:16, 2 February 2023

Feedback to this page: click here

The nano1.41 recipe

Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab

Recipe nano1.41
Recipe Gas C4F8 75 sccm, SF6 38 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 75 W PP
Temperature -20 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 2001
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 211 nm zep etched down to 10 nm



Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rates nm/min 155 161 164 171 179 166 9
Sidewall angle degs 91 90 90 90 90 90 1
CD loss nm/edge -1 -11 -13 -36 -37 -20 16
CD loss foot nm/edge 4 1 0 -22 -10 -5 11
Bowing 5 2 5 4 1 3 2
Bottom curvature -45 -40 -34 -29 -23 -34 9
zep nm/min 101
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