Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14: Difference between revisions

From LabAdviser
← Older edit
VisualWikitext
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,400 edits
 
(6 intermediate revisions by 2 users not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14 click here]'''
<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Checked for updates on 5/10-2020 - ok/jmli -->
== The nano1.4 recipe ==
== The nano1.4 recipe ==
{{Template:Author-jmli1}}
<!--Checked for updates on 2/02-2023 - ok/jmli -->


{| border="2" cellpadding="2" cellspacing="1"  
{| border="2" cellpadding="2" cellspacing="1"  
Line 31: Line 39:
|-
|-
| Mask
| Mask
| nm zep etched down to 6dgh4 nm
| 211 nm zep etched down to 77 nm
|-  
|-  
|}
|}
Line 44: Line 52:
C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -20 degs, 120 secs
C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -20 degs, 120 secs
</gallery>
</gallery>
{| {{table}}
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''30'''
| align="center" style="background:#f0f0f0;"|'''60'''
| align="center" style="background:#f0f0f0;"|'''90'''
| align="center" style="background:#f0f0f0;"|'''120'''
| align="center" style="background:#f0f0f0;"|'''150'''
| align="center" style="background:#f0f0f0;"|'''Average'''
| align="center" style="background:#f0f0f0;"|'''Std. dev.'''
|-
| Etch rates||nm/min||168||182||185||189||191||183||9
|-
| Sidewall angle||degs||91||91||91||91||90||91||0
|-
| CD loss||nm/edge||7||-3||-3||-25||-26||-10||15
|-
| CD loss foot||nm/edge||12||9||10||-11||1||4||9
|-
| Bowing||||9||6||4||5||7||6||2
|-
| Bottom curvature||||-47||-34||-34||-26||-19||-32||10
|-
| zep||nm/min||||||||||||67||
|-
|
|}

Latest revision as of 16:17, 2 February 2023

Feedback to this page: click here


The nano1.4 recipe

Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab

Recipe nano1.4
Recipe Gas C4F8 75 sccm, SF6 38 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 50 W PP
Temperature -20 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 2000
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 211 nm zep etched down to 77 nm



Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rates nm/min 168 182 185 189 191 183 9
Sidewall angle degs 91 91 91 91 90 91 0
CD loss nm/edge 7 -3 -3 -25 -26 -10 15
CD loss foot nm/edge 12 9 10 -11 1 4 9
Bowing 9 6 4 5 7 6 2
Bottom curvature -47 -34 -34 -26 -19 -32 10
zep nm/min 67
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14&oldid=44043"