Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions
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'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_TEOS) click here]''' | '''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_TEOS) click here]''' | ||
[[Category: Equipment|Thin film LPCVD TEOS]] | [[Category: Equipment|Thin film LPCVD TEOS]] | ||
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[[Category: Furnaces|LPCVD TEOS]] | [[Category: Furnaces|LPCVD TEOS]] | ||
==LPCVD TEOS | ==B3 LPCVD TEOS furnace== | ||
[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 | [[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 LPCVD TEOS furnace. Positioned in cleanroom B-1]] | ||
DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace, in LabManager "Furnace: LPCVD TEOS (B3)". | DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace, in LabManager "Furnace: LPCVD TEOS (B3)". | ||
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More information about the TEOS oxide deposition process can be found here: | More information about the TEOS oxide deposition process can be found here: | ||
[[Specific Process Knowledge/Thin film deposition/ | [[Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS|Deposition of TEOS oxide using LPCVD]] | ||
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==Overview of the performance of the LPCVD TEOS furnace and some process related parameters== | ==Overview of the performance of the LPCVD TEOS furnace and some process related parameters== | ||
{| border="2" cellspacing="0" cellpadding=" | {| border="2" cellspacing="0" cellpadding="10" | ||
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!style="background:silver; color:black | !colspan="2" border="none" style="background:silver; color:black" align="center"|Purpose | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|'''Deposition of TEOS oxide''' | ||
Deposition of TEOS oxide | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *Up to 3000 nm | ||
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|style="background:LightGrey; color:black"|Step coverage | |style="background:LightGrey; color:black"|Step coverage | ||
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|style="background:LightGrey; color:black"|Gas flows | |style="background:LightGrey; color:black"|Gas flows | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*TEOS (tetraethoxysilane): ~50 sccm. <i>The exact flow is not know - the setpoint is much lower than 50 sccm, | *TEOS (tetraethoxysilane): ~50 sccm. <i>The exact flow is not know - the setpoint is much lower than 50 sccm, because the MFC is not calibrated for TEOS</i> | ||
*O<sub>2</sub>: 0 sccm | *O<sub>2</sub>: 0 sccm | ||
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