Jump to content

Specific Process Knowledge/Lithography/Descum: Difference between revisions

← Older edit
VisualWikitext
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,871 edits
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,871 edits
 
(60 intermediate revisions by the same user not shown)
Line 8: Line 8:
__TOC__
__TOC__


=Plasma Asher 1=
= Descum Comparison Table =
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
{| class="wikitable"
 
|-
===[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool]]===
!
 
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
=Plasma Asher 2=
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher 4|Plasma Asher 4 (Clean)]]
''Jitka Urbánková & Jesper Hanberg, December 2019''
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
[[image:descum_graf.jpg|640px|thumb|Descum results plasma asher 2 - recipe 1]]
 
<span style="color:red">This tool has been decomissioned 2024-12-02.</span>
 
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager] - '''requires login'''
 
Descum of AZ  Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.
 
 
'''recipe 1:'''
*O2 flow: 100 ml/min
*N2 flow: 100 ml/min
*Power: 150 W
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20
|-
|'''Etched Thickness (nm)'''|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7
|-
|-
|'''Initial temperature (°C)'''|| 28 || 21 || 31 || 21 || 22 || 28 || 25 || 24 || 21 || 24 || 24 || 22 || 22
! scope=row style="text-align: left;" | Purpose
| Resist descum
|
*Resist stripping
*Resist descum
|
*Resist stripping
*Resist descum
|-
|-
|}
! scope=row style="text-align: left;" | Method
|}
| Plasma ashing
 
| Plasma ashing
[[image:graf_descum-recipe2.png|640px|thumb|Descum results plasma asher 2 - recipe 2]]
| Plasma ashing
 
 
'''recipe 2:'''
*O2 flow: 500 ml/min
*N2 flow: 0 ml/min
*Power: 200 W
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1 ||2 ||3 ||4 ||5 ||6 ||7 ||8 ||10 ||12 ||15 ||20
|-
|'''Etched Thickness (nm)'''||8,1 ||9,4 ||16,8 ||55,2 ||44,0 ||47,5 ||42,5 ||55,1 ||85,3 ||122,4 ||184,8 ||305,9
|-
|'''Initial temperature (°C)'''||22 ||21 ||21 ||22 ||22 ||22 ||21 ||21 ||20 ||21 ||21 ||22
|-
|-
|}
! scope=row style="text-align: left;" | Process gasses
|}
| O<sub>2</sub> (50 sccm)
 
|
A linear time dependence was observed after etching 7 minutes or more (recipe 2).
*O<sub>2</sub> (0-500 sccm)
<br clear="all" />
*N<sub>2</sub> (0-500 sccm)
 
|
=Plasma Asher 3: Descum=
*O<sub>2</sub> (0-500 sccm)
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
*N<sub>2</sub> (0-500 sccm)
 
*CF<sub>4</sub> (0-200 sccm)
Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time.
The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).
 
 
'''Ashing of  AZ MiR701 resist:'''<br>
You can use two different descum process developments: you can either change power settings or processing chamber pressure.
 
 
'''Testing different power settings:'''
[[image:AZMIR701_power_settings.png|640px|thumb|Descum results for different power settings]]
 
'''Recipe settings:'''
*O2 flow: 5 sccm
*N2 flow: 0
*Pressure: 0.2 mbar
*Power: Varied
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Power
|-  
|'''recipe 1''' || 50/0 || 52/31 || 50%
|-
|-
|'''recipe 2''' || 100/0 || 53/31 || 100%
! scope=row style="text-align: left;" | Process power
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
|-
|-
|'''recipe 3''' || 20/0 || 51/34 || 20%
! scope=row style="text-align: left;" | Substrate batch
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|-
|-
|}
! scope=row style="text-align: left;" | Substrate materials
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />


{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher03}}


'''Testing different pressure settings:'''
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher04}}
[[image:AZMIR701_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]


'''Recipe settings:'''
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher05}}
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)


=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


'''Experiment parameters:'''
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 5 || 0,2
|-
|'''recipe 2''' || 100/0 || 37/38 || 45 || 0,8
|-
|}
|}
<br clear="all" />
 
'''Ashing of AZ5214E resist:'''
[[image:AZ5214E_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]
 


'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)


<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>


'''Experiment parameters:'''
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 17 || 0,4
|-
|'''recipe 2''' || 100/0 || 37/39 || 45 || 0,8
|-
|}
|}
<br clear="all" />
<br clear="all" />
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Descum"