Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of SiO2 in E-Beam Evaporator Temescal-2: Difference between revisions
Created page with "<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br> All images and photos on this page belongs to <b>DTU Nanolab</b>.<br> The fabrication and characterization described below were conducted in <b>2023</b> by <b>Patama Pholprasit</b> and <b>Evgeniy Shkondin, DTU Nanolab</b>.<br></i> =Evaporation of SiO<sub>2</sub> in Temescal-2= This page describes e-beam evaporation method of SiO<sub>2</sub> in Temescal (10-pocket). E-Beam Ev..." |
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_SiO2_in_E-Beam_Evaporator_Temescal-2 click here]''' | |||
<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br> | <i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br> | ||
All images and photos on this page belongs to <b>DTU Nanolab</b>.<br> | All images and photos on this page belongs to <b>DTU Nanolab</b>.<br> | ||
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=Evaporation of SiO<sub>2</sub> in Temescal-2= | =Evaporation of SiO<sub>2</sub> in Temescal-2= | ||
This page describes e-beam evaporation method of SiO<sub>2</sub> in | This page describes e-beam evaporation method of SiO<sub>2</sub> in [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|10-pocket e-beam evaporator]]. E-Beam Evaporator (10-pockets) - Temescal-2 allows deposition with elevated temperature and O<sub>2</sub> gas bleed. This is ideal conditions of evaporation of oxides such as SiO<sub>2</sub>, TiO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub> and ITO. | ||
<b>We highly recommend adding 5% O<sub>2</sub> and maintaining a temperature of at least 200°C to achieve high-quality stoichiometric SiO<sub>2</sub> films. Under these conditions, you can expect to produce optical films with smooth surfaces, excellent amorphous properties, and strong adhesion. </b> | <b>We highly recommend adding 5% O<sub>2</sub> and maintaining a temperature of at least 200°C to achieve high-quality stoichiometric SiO<sub>2</sub> films. Under these conditions, you can expect to produce optical films with smooth surfaces, excellent amorphous properties, and strong adhesion. </b> | ||
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==Uniformity across 150 mm wafer== | ==Uniformity across 150 mm wafer== | ||
Results have been obtained for <100> 150 mm Si wafers with native oxide, based on ellipsometry study. | Results have been obtained for <100> 150 mm Si wafers with native oxide, based on [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|ellipsometry study]]. | ||
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=Optical functions= | =Optical functions= | ||
Results have been obtained for <100> 150 mm Si wafers with native oxide, based on ellipsometry study. Sellmeier model has been implemented for refractive index fitting. | Results have been obtained for <100> 150 mm Si wafers with native oxide, based on [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|ellipsometry study]]. Sellmeier model has been implemented for refractive index fitting. | ||
<gallery caption="" widths="400px" heights="400px" perrow="1"> | <gallery caption="" widths="400px" heights="400px" perrow="1"> | ||