Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions
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== Studies of Cr deposition processes == | == Studies of Cr deposition processes == | ||
[[/ | [[/Roughness of Chromium|Roughness of Chromium]] - ''Roughness and Uniformity of Cr layers deposited with different methods and settings'' | ||
[[/Sputtering of Cr in Sputter System (Lesker)|Sputtering of Cr in Sputter system (Lesker)]] - ''Settings and deposition rates'' | [[/Sputtering of Cr in Sputter System (Lesker)|Sputtering of Cr in Sputter system (Lesker)]] - ''Settings and deposition rates'' | ||
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[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cr:_High_tensile_stress|Stress in sputtered Cr films]] - ''Extremely high tensile stress in Cr films deposited at high temperature'' | [[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cr:_High_tensile_stress|Stress in sputtered Cr films]] - ''Extremely high tensile stress in Cr films deposited at high temperature'' | ||
== Chromium deposition == | == Chromium deposition == | ||
Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment. | Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment. | ||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]]) | ||
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! General description | ! General description | ||
|E-beam deposition of Chromium | |E-beam deposition of Chromium | ||
|Thermal deposition of Chromium | |Thermal deposition of Chromium | ||
|Sputter deposition of Chromium | |Sputter deposition of Chromium | ||
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! Pre-clean | ! Pre-clean | ||
|Ar ion gun (only in E-beam evaporator Temescal) | |Ar ion gun (only in E-beam evaporator Temescal) | ||
| | | | ||
| | | | ||
|RF Ar clean | |RF Ar clean | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to | |10Å to 300 nm* | ||
| | |100 nm | ||
|at least up to 200 nm | |at least up to 200 nm | ||
|at least up to 200 nm | |at least up to 200 nm | ||
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! Deposition rate | ! Deposition rate | ||
|1 Å/s to 10 Å/s | |1 Å/s to 10 Å/s | ||
|1 Å/s | |1 Å/s | ||
|Depends on [[/Sputtering of Cr in Sputter System (Lesker)|process parameters]]. At least up to 1.48 Å/s. See process log. | |Depends on [[/Sputtering of Cr in Sputter System (Lesker)|process parameters]]. At least up to 1.48 Å/s. See process log. | ||
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*3x8" wafers (ask for holder) | *3x8" wafers (ask for holder) | ||
*Many smaller pieces | *Many smaller pieces | ||
| | | | ||
* | *Up to *3x 4" wafers or | ||
* | *1x6" or 1x 8" wafer | ||
* | *Many smaller samples | ||
* | |||
| | | | ||
*1x6" wafers | *1x6" wafers | ||
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| | | | ||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]. | Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]. | ||
| | | | ||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet]. | Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet]. | ||
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! Comment | ! Comment | ||
| Takes approx. 20 min to pump down | | Takes approx. 20 min to pump down | ||
| Takes approx. 20 min to pump down | | Takes approx. 20 min to pump down | ||
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|} | |} | ||
'''*''' ''For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material | '''*''' ''For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material and to prioritize chamber cleaning as Cr tends to be a high-stress layer and thus causes flaking,'' | ||
Latest revision as of 10:46, 23 June 2025
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Studies of Cr deposition processes
Roughness of Chromium - Roughness and Uniformity of Cr layers deposited with different methods and settings
Sputtering of Cr in Sputter system (Lesker) - Settings and deposition rates
Sputtering of Cr in Sputter-system Metal-Oxide (PC1) - Settings and deposition rates
Sputtering of Cr in Sputter-system Metal-Nitride (PC3) - Settings and deposition rates
Thermal evaporation of Cr in Thermal evaporator - Settings and deposition results
Stress in sputtered Cr films - Extremely high tensile stress in Cr films deposited at high temperature
Chromium deposition
Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) | Thermal evaporation (Thermal evaporator) | Sputter deposition (Lesker sputterer) | Sputter deposition ((Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ) | |
|---|---|---|---|---|
| General description | E-beam deposition of Chromium | Thermal deposition of Chromium | Sputter deposition of Chromium | Sputter deposition of Chromium |
| Pre-clean | Ar ion gun (only in E-beam evaporator Temescal) | RF Ar clean | ||
| Layer thickness | 10Å to 300 nm* | 100 nm | at least up to 200 nm | at least up to 200 nm |
| Deposition rate | 1 Å/s to 10 Å/s | 1 Å/s | Depends on process parameters. At least up to 1.48 Å/s. See process log. | Depends on process parameters. |
| Batch size |
|
|
|
|
| Allowed materials |
Almost any that does not degas. See the cross-contamination sheet. |
Almost any that does not degas. See the cross-contamination sheet. |
|
|
| Comment | Takes approx. 20 min to pump down | Takes approx. 20 min to pump down | Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber |
* For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material and to prioritize chamber cleaning as Cr tends to be a high-stress layer and thus causes flaking,