Specific Process Knowledge/Lithography/Mix-and-match: Difference between revisions
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Content and illustration by DTU Nanolab unless otherwise noted. | |||
Mix-and-match lithography is a process in which two lithography processes are combined to produce a pattern in a single resist layer. In this way one can for instance combine the high resolution of E-beam lithography with the high speed of UV lithography. Other combinations using DUV are also possible. | Mix-and-match lithography is a process in which two lithography processes are combined to produce a pattern in a single resist layer. In this way one can for instance combine the high resolution of E-beam lithography with the high speed of UV lithography. Other combinations using DUV are also possible. | ||
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The two different methods for pattern alignment. | The two different methods for pattern alignment. | ||
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==Alignment accuracy== | |||
Alignment accuracy is governed by the precision with which one can determine the center of the faint exposed marks and the inherent alignment accuracy of the MLA system. Typical accuracy is found to be +/- 250 nm in both x and y. | |||
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Left and center: Vernier scales for measurement of alignment accuracy. Right: Waveguide where the left side is written by UV and the right side by E-beam. | |||
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250 nm nLOF2020 contrast curve from exposure at 100 kV on JEOL 9500 | 250 nm nLOF2020 contrast curve from exposure at 100 kV on JEOL 9500. | ||
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| [[image:nLOF_250nm_1.png|300px]] || [[image: | | [[image:nLOF_250nm_1.png|300px]] || [[image:nLOF_250nm_3.png|300px]] || [[image:nLOF_250nm_2.png|300px]] || [[image:nLOF_250nm_4.png|300px]] | ||
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100 nm lines in 1500 nm thick nLOF2020 | 100 nm lines in 1500 nm thick nLOF2020. | ||
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