Jump to content

Specific Process Knowledge/Lithography/Mix-and-match: Difference between revisions

← Older edit
VisualWikitext
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
No edit summary
 
(10 intermediate revisions by the same user not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/Mix-and-match click here]'''
Content and illustration by DTU Nanolab unless otherwise noted.
Mix-and-match lithography is a process in which two lithography processes are combined to produce a pattern in a single resist layer. In this way one can for instance combine the high resolution of E-beam lithography with the high speed of UV lithography. Other combinations using DUV are also possible.
Mix-and-match lithography is a process in which two lithography processes are combined to produce a pattern in a single resist layer. In this way one can for instance combine the high resolution of E-beam lithography with the high speed of UV lithography. Other combinations using DUV are also possible.


Line 15: Line 19:
|-  
|-  
| colspan="1" style="text-align: center;|
| colspan="1" style="text-align: center;|
The two different methods for pattern alignment. Image: Thomas Pedersen.
The two different methods for pattern alignment.  
|}
 
==Alignment accuracy==
Alignment accuracy is governed by the precision with which one can determine the center of the faint exposed marks and the inherent alignment accuracy of the MLA system. Typical accuracy is found to be +/- 250 nm in both x and y.
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:thope231127thin07.png|400px]] | [[image:thope231127thin08.png|400px]] | [[image:thope231127thin03.png|400px]]
|-
| colspan="3" style="text-align: center;|
Left and center: Vernier scales for measurement of alignment accuracy. Right: Waveguide where the left side is written by UV and the right side by E-beam.  
|}
|}


Line 40: Line 55:
|-  
|-  
| colspan="1" style="text-align: center;|
| colspan="1" style="text-align: center;|
250 nm nLOF2020 contrast curve from exposure at 100 kV on JEOL 9500. Image: Thomas Pedersen.
250 nm nLOF2020 contrast curve from exposure at 100 kV on JEOL 9500.  
|}
|}


===Example images===
===Example images (250 nm)===
The pattern is written at 6 nA with 10 nm beam pitch, i.e. a fairly high beam pitch in order to accomodate a large dose variation in one sequence. Initial test provides fair definition of lines down to 100 nm, the high line error roughness is most likely from the high beam pitch. A few example images are given below, all from 540 µC/cm<sup>2</sup>.
The pattern is written at 6 nA with 10 nm beam pitch, i.e. a fairly high beam pitch in order to accomodate a large dose variation in one sequence. Initial test provides fair definition of lines down to 100 nm, the high line error roughness is most likely from the high beam pitch. A few example images are given below, all from 540 µC/cm<sup>2</sup>.


{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
|-
| [[image:IMAGE74_540.png|300px]] || [[image:IMAGE825_540.png|300px]] || [[image:IMAGE768_540.png|300px]] || [[image:IMAGE847_540.png|300px]]
| [[image:nLOF_250nm_1.png|300px]] || [[image:nLOF_250nm_3.png|300px]] || [[image:nLOF_250nm_2.png|300px]] || [[image:nLOF_250nm_4.png|300px]]
|-
| colspan="4" style="text-align: center;|
Example images from left to right: 100 nm lines, 150 nm lines, 100 nm vernier scale lines, cartoon figures. Image: Thomas Pedersen.
|}
 
===Example images (1500 nm)===
Undiluted nLOF2020 can also be used, in this case a 1500 nm thick resist is exposed at 160 µC/cm<sup>2</sup>. While it is possible to define lines down to about 100 nm the high aspect ratio will cause free standing lines to collapse as illustrated below.
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:nLOF_1500nm_1.png|300px]] || [[image:nLOF_1500nm_2.png|300px]]
|-  
|-  
| colspan="4" style="text-align: center;|
| colspan="4" style="text-align: center;|
Example images from left to right: 100 nm lines (4 µm FOV), 150 nm lines (4 µm FOV), 100 nm vernier scale lines (25 µm FOV), cartoon figures (25 µm FOV). Image: Thomas Pedersen.
100 nm lines in 1500 nm thick nLOF2020.  
|}
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Mix-and-match"