Specific Process Knowledge/Lithography/Coaters/GammaEbeam: Difference between revisions
| (3 intermediate revisions by the same user not shown) | |||
| Line 3: | Line 3: | ||
[[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|right|thumb|Spin Coater: Gamma E-beam & UV in E-5]] | [[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|right|thumb|Spin Coater: Gamma E-beam & UV in E-5]] | ||
Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles | Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 100 mm and 150 mm wafers using two separate coater stations. It can be reconfigured to enable coating 2" substrates on Coater1, but this requires a tool change. | ||
Coater1 is equipped with 2 resist lines, as well as 1 syringe line: | |||
*AR-P 6200.09 (CSAR) | *AR-P 6200.09 (CSAR) | ||
*ZEP 520A diluted 1:2 | |||
*Syringe, which can be used for various resists (anisole-based or PGMEA-based). ''We currently recommend against using the syringe, as the process setup is quite demanding. Use a manual spin coater instead.'' | *Syringe, which can be used for various resists (anisole-based or PGMEA-based). ''We currently recommend against using the syringe, as the process setup is quite demanding. Use a manual spin coater instead.'' | ||
Coater2 is equipped with 4 different resists lines: | |||
*AZ 5214E | *AZ 5214E | ||
*AZ MiR 701 | *AZ MiR 701 | ||
| Line 16: | Line 17: | ||
*AZ 4562 | *AZ 4562 | ||
The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and ''requires'' batch processing - it is not for processing a few wafers now and then. | The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and ''requires'' batch processing - it is not for processing a few wafers now and then. | ||
Link to information about [[Specific_Process_Knowledge/Pattern_Design#Helpful_information_for_chip_layout|coater chuck size and hotplate pin positions]]. | |||
'''[https://www.youtube.com/watch?v=3JhM3rmLVpA Training video]''' | '''[https://www.youtube.com/watch?v=3JhM3rmLVpA Training video]''' | ||
| Line 25: | Line 28: | ||
*[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma E-beam and UV processing#General_Process_Information|General Process information]] | *[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma E-beam and UV processing#General_Process_Information|General Process information]] | ||
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Quality_Control_(QC)|Quality Control (QC)]] | *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Quality_Control_(QC)|Quality Control (QC)]] | ||
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Standard_Processes|Standard Processes | *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Standard_Processes|Standard Processes]] | ||
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Syringe_Processes|Syringe Processes]] | *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Syringe_Processes|Syringe Processes]] | ||
| Line 45: | Line 48: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* AR-P 6200.09 (CSAR) | * AR-P 6200.09 (CSAR) | ||
* ZEP 520A diluted 1:2 (pay-per-use) | |||
* AZ 5214E | * AZ 5214E | ||
* AZ MiR 701 (29cps) | * AZ MiR 701 (29cps) | ||
| Line 58: | Line 62: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* AR-P 6200.09 (CSAR): 170-500 nm | * AR-P 6200.09 (CSAR): 170-500 nm | ||
* ZEP 520A diluted 1:2: 55-120 nm | |||
* AZ 5214E: 1.5-5 µm | * AZ 5214E: 1.5-5 µm | ||
* AZ MiR 701: 1.5-4 µm | * AZ MiR 701: 1.5-4 µm | ||
| Line 86: | Line 91: | ||
|style="background:LightGrey; color:black"|Substrate size | |style="background:LightGrey; color:black"|Substrate size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* 50 mm wafers | * 50 mm wafers (requires tool change) | ||
* 100 mm wafers | * 100 mm wafers | ||
* 150 mm wafers | * 150 mm wafers | ||
Latest revision as of 13:52, 5 August 2026
Spin Coater: Gamma E-beam and UV
Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 100 mm and 150 mm wafers using two separate coater stations. It can be reconfigured to enable coating 2" substrates on Coater1, but this requires a tool change.
Coater1 is equipped with 2 resist lines, as well as 1 syringe line:
- AR-P 6200.09 (CSAR)
- ZEP 520A diluted 1:2
- Syringe, which can be used for various resists (anisole-based or PGMEA-based). We currently recommend against using the syringe, as the process setup is quite demanding. Use a manual spin coater instead.
Coater2 is equipped with 4 different resists lines:
- AZ 5214E
- AZ MiR 701
- AR-P 6200.09 (CSAR)
- AZ 4562
The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and requires batch processing - it is not for processing a few wafers now and then.
Link to information about coater chuck size and hotplate pin positions.
The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager - requires login
Process information
| Purpose |
| |
|---|---|---|
| Resist |
| |
| Performance | HMDS contact angle |
60 - 80° (on Silicon) |
| Coating thickness |
| |
| Process parameters | Priming temperature |
120 °C |
| Spin speed |
10 - 6000 rpm | |
| Spin acceleration |
10 - 10000 rpm/s | |
| Hotplate temperature |
25 - 200 °C | |
| Cool plate temperature |
21 °C | |
| Substrates | Substrate size |
|
| Allowed materials |
Silicon, III-V, and glass Resists and crystalbond are not allowed in the HMDS module | |
| Batch |
1 - 25 |