Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions
No edit summary |
|||
| (7 intermediate revisions by the same user not shown) | |||
| Line 7: | Line 7: | ||
==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching== | ==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching== | ||
{{CC-bghe2}}<br> | |||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
!Parameter | !Parameter | ||
| Line 49: | Line 49: | ||
|- | |- | ||
|} | |} | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
! | !Measured results | ||
!'''SiO2_res_10''' | !'''SiO2_res_10''' | ||
!'''DOE2/Post_II_21''' | !'''DOE2/Post_II_21''' | ||
| Line 86: | Line 87: | ||
File:SRN etch uniformity DOE2_Post_II_21.jpg | File:SRN etch uniformity DOE2_Post_II_21.jpg | ||
</gallery> | </gallery> | ||
====Adding electromagnets (EM) to see if that could improve the uniformity==== | |||
Recipe used: SiO2_res_10<br> | |||
[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]] | |||
[[File:Contour Plot SNR_a12 etch rate.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]] | |||
Latest revision as of 14:27, 6 September 2023
Feedback to this page:
click here
This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated
Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching
Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
| Parameter | Recipe name: SiO2_res_10 | Recipe name: DOE2/Post_II_21 |
|---|---|---|
| Coil Power [W] | 2500 | 3840 |
| Platen Power [W] | 300 | 300 |
| Platen temperature [oC] | 20 | 20 |
| H2 flow [sccm] | 25.6 | 0 |
| He flow [sccm] | 448.7 | 0 |
| C4F8 flow [sccm] | 25.6 | 30 |
| Pressure [mTorr] | 8.8 | 0.9 |
| Measured results | SiO2_res_10 | DOE2/Post_II_21 |
|---|---|---|
| Average etch of SRN on 6" wafer | 166 nm/min [+- 17% over a 6" wafer] | 142 nm/min [+- 9% over a 6" wafer] |
| Etch rate of Si3N4 | ? | ? |
| Etch rate of SiO2 | 250 nm/min [+- 3% over a 6" wafer] | 306 nm/min [on small piece] |
| Etch rate in Si | ?nm/min | ? nm/min |
| Etch rate of Mir resist | ? nm/min | ? nm/min |
Etch rate uniformity
- SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers
-
-
Adding electromagnets (EM) to see if that could improve the uniformity
Recipe used: SiO2_res_10
