Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions
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[[Category: Equipment |Etch DRIE]] | [[Category: Equipment |Etch DRIE]] | ||
[[Category: Etch (Dry) Equipment|DRIE]] | [[Category: Etch (Dry) Equipment|DRIE]] | ||
<br> {{ | <br> {{CC-bghe1}} | ||
==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching== | ==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching== | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
!Parameter | !Parameter | ||
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|- | |- | ||
|} | |} | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
! | !Measured results | ||
!'''SiO2_res_10''' | !'''SiO2_res_10''' | ||
!'''DOE2/Post_II_21''' | !'''DOE2/Post_II_21''' | ||
|- | |- | ||
| | |Average etch of SRN on 6" wafer | ||
| | |166 nm/min [+- 17% over a 6" wafer]''' | ||
|142 nm/min [+- 9% over a 6" wafer]''' | |||
|- | |- | ||
|Etch rate of Si3N4 | |Etch rate of Si3N4 | ||
| | |? | ||
| | |? | ||
|- | |- | ||
|Etch rate of SiO2 | |Etch rate of SiO2 | ||
| | |250 nm/min [+- 3% over a 6" wafer] | ||
| | |306 nm/min [on small piece] | ||
|- | |- | ||
|Etch rate in Si | |Etch rate in Si | ||
| | |?nm/min | ||
| | |? nm/min | ||
|- | |- | ||
|Etch rate of Mir resist | |Etch rate of Mir resist | ||
|''' | |'''? nm/min | ||
|''' | |'''? nm/min | ||
|- | |- | ||
|} | |} | ||
===Etch rate uniformity=== | ===Etch rate uniformity=== | ||
<gallery caption="SRN etch uniformity with recipes optimized for SiO2 etching" widths="400px" heights="250px" perrow="2"> | <gallery caption="SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers" widths="400px" heights="250px" perrow="2"> | ||
File:SRN etch uniformity SiO2_res_10.jpg | File:SRN etch uniformity SiO2_res_10.jpg | ||
File:SRN etch uniformity DOE2_Post_II_21.jpg | File:SRN etch uniformity DOE2_Post_II_21.jpg | ||
</gallery> | </gallery> | ||
====Adding electromagnets (EM) to see if that could improve the uniformity==== | |||
Recipe used: SiO2_res_10<br> | |||
[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]] | |||
[[File:Contour Plot SNR_a12 etch rate.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]] | |||
Latest revision as of 15:08, 11 September 2026
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The content on this page, including all images and pictures, was created by Berit Herstrøm @ DTU Nanolab (BGHE), unless otherwise stated.
Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching
| Parameter | Recipe name: SiO2_res_10 | Recipe name: DOE2/Post_II_21 |
|---|---|---|
| Coil Power [W] | 2500 | 3840 |
| Platen Power [W] | 300 | 300 |
| Platen temperature [oC] | 20 | 20 |
| H2 flow [sccm] | 25.6 | 0 |
| He flow [sccm] | 448.7 | 0 |
| C4F8 flow [sccm] | 25.6 | 30 |
| Pressure [mTorr] | 8.8 | 0.9 |
| Measured results | SiO2_res_10 | DOE2/Post_II_21 |
|---|---|---|
| Average etch of SRN on 6" wafer | 166 nm/min [+- 17% over a 6" wafer] | 142 nm/min [+- 9% over a 6" wafer] |
| Etch rate of Si3N4 | ? | ? |
| Etch rate of SiO2 | 250 nm/min [+- 3% over a 6" wafer] | 306 nm/min [on small piece] |
| Etch rate in Si | ?nm/min | ? nm/min |
| Etch rate of Mir resist | ? nm/min | ? nm/min |
Etch rate uniformity
- SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers
-
-
Adding electromagnets (EM) to see if that could improve the uniformity
Recipe used: SiO2_res_10
