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[[Category: Equipment |Etch DRIE]]
[[Category: Equipment |Etch DRIE]]
[[Category: Etch (Dry) Equipment|DRIE]]
[[Category: Etch (Dry) Equipment|DRIE]]
<br> {{CC1}}
<br> {{CC-bghe1}}


==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==
==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==
 
{{CC-bghe2}}<br>
{| border="2" cellspacing="2" cellpadding="3"  
{| border="2" cellspacing="2" cellpadding="3"  
!Parameter
!Parameter
|Recipe name: '''Slow Etch'''
|Recipe name: '''SiO2_res_10'''
|Recipe name: '''Slow Etch2'''
|Recipe name: '''DOE2/Post_II_21'''
    
    
|-
|-
|Coil Power [W]
|Coil Power [W]
|350
|2500
|200
|3840


|-
|-
|Platen Power [W]
|Platen Power [W]
|25
|300
|50
|300


|-
|-
Line 30: Line 30:
|-
|-
|H2 flow [sccm]
|H2 flow [sccm]
|15
|25.6
|15
|0
|-
|He flow [sccm]
|448.7
|0


|-
|-
|CF<sub>4</sub> flow [sccm]
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|30
|25.6
|30
|30


|-
|-
|Pressure [mTorr]
|Pressure [mTorr]
|3
|8.8
|10
|0.9


|-
|-
|}
|}


{| border="2" cellspacing="2" cellpadding="3"
{| border="2" cellspacing="2" cellpadding="3"
!Typical results
!Measured results
!'''Slow Etch'''
!'''SiO2_res_10'''
!'''Slow Etch2'''
!'''DOE2/Post_II_21'''


|-
|-
|Etch of SRN
|Average etch of SRN on 6" wafer
|'''~43nm/min [measured 39-50 nm/min over a 6" wafer]
|166 nm/min [+- 17% over a 6" wafer]'''
|'''23-25 nm/min [4" on carrier]]
|142 nm/min [+- 9% over a 6" wafer]'''


|-
|-
|Etch rate of Si3N4
|Etch rate of Si3N4
|'''~49 nm/min [4" on carrier]
|?
|'''24-26 nm/min [4" on carrier]
|?


|-
|-
|Etch rate of SiO2
|Etch rate of SiO2
|'''~42nm/min [41-43 nm/min over a 6" wafer]
|250 nm/min [+- 3% over a 6" wafer]
|'''13.7-14.7 nm/min [4" on carrier]
|306 nm/min [on small piece]


|-
|-
|Etch rate in Si
|Etch rate in Si
|'''ñm/min
|?nm/min
|'''11-13 nm/min (10% load, 4" wafer on 6" carrier)
|? nm/min
|-
|-
|Etch rate of Mir resist
|Etch rate of Mir resist
|'''~nm/min  
|'''? nm/min  
|'''~17 nm/min
|'''? nm/min


|-
|Tested etch time without burning the resist
|3 min (6 min => resist burned)
|30 min
|-
|Profile [<sup>o</sup>]
|
|
|-
|-
|}
|}
===Etch rate uniformity===
<gallery caption="SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers" widths="400px" heights="250px" perrow="2">
File:SRN etch uniformity SiO2_res_10.jpg
File:SRN etch uniformity DOE2_Post_II_21.jpg
</gallery>
====Adding electromagnets (EM) to see if that could improve the uniformity====
Recipe used: SiO2_res_10<br>
[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]
[[File:Contour Plot SNR_a12 etch rate.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]]
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