Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions

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[[Category: Equipment |Etch DRIE]]
[[Category: Equipment |Etch DRIE]]
[[Category: Etch (Dry) Equipment|DRIE]]
[[Category: Etch (Dry) Equipment|DRIE]]
<br> {{CC-bghe}}
<br> {{CC-bghe1}}


==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==
==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==
{{CC-bghe2}}<br>
{| border="2" cellspacing="2" cellpadding="3"
!Parameter
|Recipe name: '''SiO2_res_10'''
|Recipe name: '''DOE2/Post_II_21'''
 
|-
|Coil Power [W]
|2500
|3840
|-
|Platen Power [W]
|300
|300
|-
|Platen temperature [<sup>o</sup>C]
|20
|20
|-
|H2 flow [sccm]
|25.6
|0
|-
|He flow [sccm]
|448.7
|0
|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|25.6
|30
|-
|Pressure [mTorr]
|8.8
|0.9
|-
|}
{| border="2" cellspacing="2" cellpadding="3"
!Measured results
!'''SiO2_res_10'''
!'''DOE2/Post_II_21'''
|-
|Average etch of SRN on 6" wafer
|166 nm/min [+- 17% over a 6" wafer]'''
|142 nm/min [+- 9% over a 6" wafer]'''
|-
|Etch rate of Si3N4
|?
|?
|-
|Etch rate of SiO2
|250 nm/min [+- 3% over a 6" wafer]
|306 nm/min [on small piece]
|-
|Etch rate in Si
|?nm/min
|? nm/min
|-
|Etch rate of Mir resist
|'''? nm/min
|'''? nm/min
|-
|}
===Etch rate uniformity===
<gallery caption="SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers" widths="400px" heights="250px" perrow="2">
File:SRN etch uniformity SiO2_res_10.jpg
File:SRN etch uniformity DOE2_Post_II_21.jpg
</gallery>
====Adding electromagnets (EM) to see if that could improve the uniformity====
Recipe used: SiO2_res_10<br>
[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]
[[File:Contour Plot SNR_a12 etch rate.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]]

Latest revision as of 14:27, 6 September 2023

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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching

Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab

Parameter Recipe name: SiO2_res_10 Recipe name: DOE2/Post_II_21
Coil Power [W] 2500 3840
Platen Power [W] 300 300
Platen temperature [oC] 20 20
H2 flow [sccm] 25.6 0
He flow [sccm] 448.7 0
C4F8 flow [sccm] 25.6 30
Pressure [mTorr] 8.8 0.9


Measured results SiO2_res_10 DOE2/Post_II_21
Average etch of SRN on 6" wafer 166 nm/min [+- 17% over a 6" wafer] 142 nm/min [+- 9% over a 6" wafer]
Etch rate of Si3N4 ? ?
Etch rate of SiO2 250 nm/min [+- 3% over a 6" wafer] 306 nm/min [on small piece]
Etch rate in Si ?nm/min ? nm/min
Etch rate of Mir resist ? nm/min ? nm/min

Etch rate uniformity

  • SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers

Adding electromagnets (EM) to see if that could improve the uniformity

Recipe used: SiO2_res_10

SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12%
SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60%
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