Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Silicon_Oxide click here]''' | ||
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*Isotropic etch | *Isotropic etch | ||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls. | ||
*Primarily for samples with small amounts of metals on. | |||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
* | *Primarily for III-V samples | ||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
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*Anisotropic etch: almost vertical sidewalls | *Anisotropic etch: almost vertical sidewalls | ||
*We prefer that SiO2 etch | *We prefer that SiO2 etch takes place in the AOE or Pegasus 4. | ||
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*Primarily for pure physical etch by sputtering with Ar-ions | *Primarily for pure physical etch by sputtering with Ar-ions | ||
*Also for slanted gratings | |||
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*Gas phase HF etching with ethanol as carrier | *Gas phase HF etching with ethanol as carrier | ||
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*Aluminium | *Aluminium | ||
*Chromium | *Chromium | ||
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*Any material that is accepted in the machine | *Any material that is accepted in the machine | ||
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<br clear="all" /> | <br clear="all" /> | ||
==Dry etch with Hard mask== | ==Dry etch with Hard mask== | ||
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The recipe ICP is on ICP metal call: A SiO2 etch with C4F8 with resist mask<br> | The recipe ICP is on ICP metal call: A SiO2 etch with C4F8 with resist mask<br> | ||
I had problems with this recipe - it gave polymer on the surface, therefor I do not have more info on that.<br> | I had problems with this recipe - it gave polymer on the surface, therefor I do not have more info on that.<br> | ||