Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142: Difference between revisions
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==Etching SRN (Silicon Rich Nitride) with nano1.42== | |||
''This test has been done by Leonid Beliaev'' <br> | ''This test has been done by Leonid Beliaev'' <br> | ||
*274nm SRN by LPCVD ("6 inch LS" recipe) | *274nm SRN by LPCVD ("6 inch LS" recipe) | ||
| Line 89: | Line 89: | ||
*Barc etch in Pegasus 1 at -19 deg, 40s | *Barc etch in Pegasus 1 at -19 deg, 40s | ||
*Nano 1.42 at -19 deg, 5 min | *Nano 1.42 at -19 deg, 5 min | ||
[[File:Etch_rate.png|400px]] | |||
[[File:Test_007.jpg|400px|left|thumb|Image: Leonid Beliaev]] | |||
Latest revision as of 10:22, 28 July 2023
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The nano1.42 recipe
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
| Recipe | Gas | C4F8 75 sccm, SF6 38 sccm |
|---|---|---|
| Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | |
| Power | 800 W CP, 40 W PP | |
| Temperature | -20 degs | |
| Hardware | 100 mm Spacers | |
| Time | 120 secs | |
| Conditions | Run ID | 2017 |
| Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | |
| Mask | 211 nm zep etched down to 82 nm |
- The results of the nano1.42 recipe
-
The 30 nm trenches -
The 60 nm trenches -
The 90 nm trenches -
The 120 nm trenches -
The 150 nm trenches
| Nominal trench line width | ' | 30 | 60 | 90 | 120 | 150 | Average | Std. dev. |
| Etch rates | nm/min | 148 | 158 | 164 | 167 | 166 | 160 | 8 |
| Sidewall angle | degs | 90 | 90 | 90 | 90 | 90 | 90 | 0 |
| CD loss | nm/edge | 7 | -7 | -7 | -28 | -28 | -13 | 15 |
| CD loss foot | nm/edge | 12 | 5 | 6 | -15 | -1 | 1 | 10 |
| Bowing | -1 | 1 | -2 | -5 | -7 | -3 | 3 | |
| Bottom curvature | -46 | -30 | -29 | -31 | -27 | -32 | 8 | |
| zep | nm/min | 65 | ||||||
Etching SRN (Silicon Rich Nitride) with nano1.42
This test has been done by Leonid Beliaev
- 274nm SRN by LPCVD ("6 inch LS" recipe)
- Substrate: Si/SiO2(1100nm)
- DUV-lithography: KRF M230Y resist 360 nm, Barc 65 nm, exposure dose 220J/m2
- Pattern: Grating with period 400 nm and grating bar width of
- Barc etch in Pegasus 1 at -19 deg, 40s
- Nano 1.42 at -19 deg, 5 min
