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{{Template:Peg2configheader1
{{Template:Peg2configheader1
|TableHeader= 7: Currently valid from June 13 2022 onwards
|TableHeader= 7: Currently valid from May 17 2023 onwards
}}
}}
{{Template:Peg2configcontent1
{{Template:Peg2configcontent1
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}}
}}
{{Template:Peg2configcontent1
{{Template:Peg2configcontent1
|ItemName= Electrostatic clamping, chip bonding with Galden oil and helium backside cooling are no longer being used.
|ItemName= Electrostatic clamping and helium backside cooling are again mandatory.
|ItemConfiguration= The processes run in Pegasus 2 operate at such low powers that they do not require very efficient cooling. It has therefore been decided that the following options/procedures
|ItemConfiguration= The processes run in Pegasus 2 operate at such low powers that they do not require very efficient cooling. It has therefore been decided that the following options/procedures
* Electrostatic clamping of carriers/substrates
* Electrostatic clamping of carriers/substrates
* Helium backside cooling
* The Helium backside cooling is kept at 5 Torr instead of the usual 10 Torr on the other Pegasus tools.
* Using bonding procedures such as droplets of Galden oil to increase thermal contact between chips and carrier
* Using bonding procedures such as droplets of Galden oil to increase thermal contact between chips and carrier
will no longer be required.
will no longer be required.
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* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Black silicon on Demand|Black silicon on Demand]]
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Black silicon on Demand|Black silicon on Demand]]
* [[/ORE with Al2O3 mask|The ORE process with Al2O3 mask]]
* [[/ORE with Al2O3 mask|The ORE process with Al2O3 mask]]
*[[/Nanoscale silicon nitride etch with SF6|Nanoscale silicon nitride etch with SF6]]
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