Specific Process Knowledge/Lithography/Strip: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]''' | ||
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= Strip Comparison Table = | = Strip Comparison Table = | ||
{| border=" | {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | ||
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | ||
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= Plasma Ashing = | = Plasma Ashing = | ||
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! Photoresist stripping | ! Photoresist stripping | ||
! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]] | ! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]] | ||
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! Ashing of organic material | ! Ashing of organic material | ||
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!Process pressure | |||
|0.8- 1.2mbar | |0.8- 1.2mbar | ||
|0.5- 1.0mbar | |0.5- 1.0mbar | ||
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|0.8-1.5mbar | |0.8-1.5mbar | ||
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!Process gases | |||
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*O<sub>2</sub> (400 sccm) | *O<sub>2</sub> (400 sccm) | ||
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|O<sub>2</sub> | |O<sub>2</sub> | ||
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!Process power | |||
|600-1000W | |600-1000W | ||
|150-300W | |150-300W | ||
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|1000W or less for heat- sensitive materials | |1000W or less for heat- sensitive materials | ||
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!Process time | |||
|5-60 minutes | |5-60 minutes | ||
|1-5 minutes | |1-5 minutes | ||
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|Between 0.5 and 20 hours, depending on the material | |Between 0.5 and 20 hours, depending on the material | ||
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!Batch size | |||
|1-30 | |1-30 | ||
|1-10 | |1-10 | ||
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A | Typical process time for stripping in plasma asher 1 or 2: | ||
At a load | *1.5 µm AZ 5214E resist film: ~15 min | ||
*10 µm AZ 4562 resist film: ~45 min | |||
Typical process parameters: | |||
*O<sub>2</sub>: 400 ml/min | |||
*N<sub>2</sub>: 70 ml/min | |||
*Power: 1000 W | |||
A typical descum process in plasma asher 1 or 2: | |||
*O<sub>2</sub>: 70 ml/min | |||
*N<sub>2</sub>: 70 ml/min | |||
*Power: 150 W | |||
*Time : 10 min | |||
Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm. | |||
'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.''' | |||
==Plasma Asher 1== | ==Plasma Asher 1== | ||
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|-style="background:whitesmoke; color:black" | |-style="background:whitesmoke; color:black" | ||
!Process temperature | !Process temperature | ||
|Up to | |Up to 65°C | ||
|Up to | |Up to 65°C | ||
|- | |- | ||
Latest revision as of 10:17, 18 March 2024
The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.
Feedback to this page: click here
Strip Comparison Table
Equipment | Plasma Asher 1 | Plasma Asher 2 | Plasma Asher 3: Descum | Resist strip | Lift-off | |
---|---|---|---|---|---|---|
Purpose |
All purposes |
Clean wafers only, no metal |
Resist descum |
Resist strip, no metal lift off |
Lift-off | |
Method |
Plasma ashing |
Plasma ashing |
Plasma ashing |
Solvent and ultra sound |
Solvent and ultra sound | |
Process parameters | Process gasses |
|
|
|
|
|
Max. process power |
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|
|
|
| |
Solvent |
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|
|
|
| |
Substrates | Batch size |
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Allowed materials |
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No metal allowed!
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No metal allowed!
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|
Plasma Ashing
Photoresist stripping | Descum after lithography | Surface treatment of plastic, ceramic and metal | Ashing of organic material | |
---|---|---|---|---|
Process pressure | 0.8- 1.2mbar | 0.5- 1.0mbar | 0.5- 1.0mbar | 0.8-1.5mbar |
Process gases |
|
|
O2, CF4, N2 or their mixtures | O2 |
Process power | 600-1000W | 150-300W | 150-300W | 1000W or less for heat- sensitive materials |
Process time | 5-60 minutes | 1-5 minutes | a few seconds to a few minutes | Between 0.5 and 20 hours, depending on the material |
Batch size | 1-30 | 1-10 | 1 wafer at a time | 1 wafer at a time, use a container, e.g Petri dish |
Typical process time for stripping in plasma asher 1 or 2:
- 1.5 µm AZ 5214E resist film: ~15 min
- 10 µm AZ 4562 resist film: ~45 min
Typical process parameters:
- O2: 400 ml/min
- N2: 70 ml/min
- Power: 1000 W
A typical descum process in plasma asher 1 or 2:
- O2: 70 ml/min
- N2: 70 ml/min
- Power: 150 W
- Time : 10 min
Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.
Plasma Asher 1
The Plasma Asher 1 (TePla 300 auto load model) can be used for the following process:
- Photoresist stripping
- Descumming
- Surface cleaning after storage
- Surface cleaning after processes using oil pump or diffusion pump vacuum
- Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
- Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
- Removal of organic passivation layers and masks
- Etching of glass and ceramic
- Etching of SiO, SiN, Si
- Removal of polyimide layers
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Nanolab.
The user manual, user APV, and contact information can be found in LabManager - requires login
Process Information
Plasma Asher 2
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
The typical process parameters when operating the equipment:
- Photeresist stripping
Pressure: 0.8 - 1.0 mbar
Gas: O2
Power: 600 - 1000 watts
Time: 5 -30 min., depending on photoresist type and thickness
A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 18.
A Descum process in manual mode: O2:70, N2:70, power:150W, time:10 min
Be sure to wait for cooling if the mashine has been used at 1000W right before. At a load at 2 Fused silica wafers resist removed 0.01-01,5um
The other materials have not been tested yet.
The user manual, user APV, and contact information can be found in LabManager - requires login
Process Information
Plasma Asher 3: Descum
The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load one 4 inch substrate ad time or few smaller pieces.
In this machine, only O2 and N2 gases are used for processes.
The typical process parameters when operating the equipment:
- Photeresist descum
Pressure: 0.2 - 0.8mbar Gas: O2 Power: 50% - 100% Time: 1 -10 min., depending on photoresist type and thickness
The other materials have not been tested yet.
The user manual, user APV, and contact information can be found in LabManager - requires login
Process Information
Resist Strip
This resist strip is only for wafers without metal and SU-8.
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.
Here are the main rules for resist strip use:
- Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
- After the strip rinse your wafers in the IPA bath for 2-3 min.
- Rinse your wafers for 4-5 min. in running water after stripping.
The user manual and contact information can be found in LabManager: Resist Strip - requires login
Overview of wet bench 06 and 07
Resist Strip | Lift-off | |
---|---|---|
General description | Wet stripping of resist | Lift-off process |
Chemical solution | NMP Remover 1165 | NMP Remover 1165 |
Process temperature | Up to 65°C | Up to 65°C |
Batch size |
1 - 25 wafers |
1 - 25 wafers |
Size of substrate |
|
|
Allowed materials |
|
All metals except Type IV (Pb, Te) |