Specific Process Knowledge/Lithography/Strip: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]'''
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= Strip Comparison Table =
= Strip Comparison Table =
{| border="2" cellspacing="0" cellpadding="2"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
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= Plasma Ashing =
= Plasma Ashing =


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|-


{| border="2" cellspacing="0" cellpadding="4" align="left"
|-style="background:silver; color:black"
!
|
! Photoresist stripping
! Photoresist stripping
! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]]
! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]]
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! Ashing of organic material
! Ashing of organic material
|-  
|-  
|'''Process pressure'''
 
|-style="background:whitesmoke; color:black"
!Process pressure
|0.8- 1.2mbar
|0.8- 1.2mbar
|0.5- 1.0mbar  
|0.5- 1.0mbar  
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|0.8-1.5mbar
|0.8-1.5mbar
|-
|-
|'''Process gases'''
 
|-style="background:silver; color:black"
!Process gases
|
|
*O<sub>2</sub> (400 sccm)
*O<sub>2</sub> (400 sccm)
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|O<sub>2</sub>
|O<sub>2</sub>
|-
|-
|'''Process  power'''
 
|-style="background:whitesmoke; color:black"
!Process  power
|600-1000W
|600-1000W
|150-300W
|150-300W
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|1000W or less for heat- sensitive materials
|1000W or less for heat- sensitive materials
|-
|-
|'''Process  time'''
 
|-style="background:silver; color:black"
!Process  time
|5-60 minutes
|5-60 minutes
|1-5 minutes
|1-5 minutes
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|Between 0.5 and 20 hours, depending on the material
|Between 0.5 and 20 hours, depending on the material
|-
|-
|'''Batch size'''
 
|-style="background:whitesmoke; color:black"
!Batch size
|1-30
|1-30
|1-10
|1-10
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A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210 ml O<math>_2</math>/min or mixture of 210 ml O<math>_2</math>/min and 70 ml N<math>_2</math>/min, power 1000 W.


A Descum process in manual mode: O2: 70 sccm, N2: 70 sccm, power: 150 W, time: 10 min. Be sure to wait for cooling if the machine has been used at 1000W right before.
Typical process time for stripping in plasma asher 1 or 2:
At a load at 2 Fused silica wafers resist removed 0.01-01,5 um
*1.5 µm AZ 5214E resist film: ~15 min
*10 µm AZ 4562 resist film: ~45 min
 
Typical process parameters:
*O<sub>2</sub>: 400 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 1000 W
 
 
A typical descum process in plasma asher 1 or 2:
*O<sub>2</sub>: 70 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 150 W
*Time : 10 min
 
 
Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
 
'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.'''


==Plasma Asher 1==
==Plasma Asher 1==
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|-style="background:whitesmoke; color:black"
|-style="background:whitesmoke; color:black"
!Process temperature
!Process temperature
|Up to 60°C
|Up to 65°C
|Up to 60°C
|Up to 65°C
|-
|-



Latest revision as of 10:17, 18 March 2024

The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.

Feedback to this page: click here

Strip Comparison Table

Equipment Plasma Asher 1 Plasma Asher 2 Plasma Asher 3: Descum Resist strip Lift-off
Purpose

All purposes

Clean wafers only, no metal

Resist descum

Resist strip, no metal lift off

Lift-off

Method

Plasma ashing

Plasma ashing

Plasma ashing

Solvent and ultra sound

Solvent and ultra sound

Process parameters Process gasses
  • O2 (0 - 400 sccm)
  • N2
  • CF4
  • O2 (0 - 400 sccm)
  • N2
  • O2 (flow unknown)
  • NA
  • NA
Max. process power
  • 1000 W
  • 1000 W
  • 100% (power unknown)
  • NA
  • NA
Solvent
  • NA
  • NA
  • NA
  • NMP (Remover 1165)
  • Rinse in IPA
  • NMP (Remover 1165)
  • Rinse in IPA
Substrates Batch size
  • 1 small sample
  • 1 50 mm wafer
  • 1 - 30 100 mm wafers
  • 1 - 25 150 mm wafers
  • 1 small sample
  • 1 50 mm wafer
  • 1 - 30 100 mm wafers
  • 1 - 25 150 mm wafers
  • 1 small sample
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 - 25 100 mm wafers
  • 1 - 25 150 mm wafers
  • 1 - 25 100 mm wafers
  • 1 - 25 150 mm wafers
Allowed materials
  • Silicon, glass, and polymer substrates
  • Film or pattern of all but Type IV

No metal allowed!

  • Silicon, glass, and polymer substrates
  • Film or pattern of photoresist/polymer
  • Silicon, III-V, and glass substrates
  • Film or pattern of all but Type IV

No metal allowed!

  • Silicon, glass, and polymer substrates
  • Film or pattern of photoresist/polymer
  • Silicon and glass substrates
  • Film or pattern of all but Type IV


Plasma Ashing

Photoresist stripping Descum after lithography Surface treatment of plastic, ceramic and metal Ashing of organic material
Process pressure 0.8- 1.2mbar 0.5- 1.0mbar 0.5- 1.0mbar 0.8-1.5mbar
Process gases
  • O2 (400 sccm)
  • N2 (0-70 sccm)
  • O2 (70-210 sccm)
  • N2 (0-70 sccm)
O2, CF4, N2 or their mixtures O2
Process power 600-1000W 150-300W 150-300W 1000W or less for heat- sensitive materials
Process time 5-60 minutes 1-5 minutes a few seconds to a few minutes Between 0.5 and 20 hours, depending on the material
Batch size 1-30 1-10 1 wafer at a time 1 wafer at a time, use a container, e.g Petri dish



Typical process time for stripping in plasma asher 1 or 2:

  • 1.5 µm AZ 5214E resist film: ~15 min
  • 10 µm AZ 4562 resist film: ~45 min

Typical process parameters:

  • O2: 400 ml/min
  • N2: 70 ml/min
  • Power: 1000 W


A typical descum process in plasma asher 1 or 2:

  • O2: 70 ml/min
  • N2: 70 ml/min
  • Power: 150 W
  • Time : 10 min


Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.

NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.

Plasma Asher 1

The Plasma Asher 1 is placed in C-1

The Plasma Asher 1 (TePla 300 auto load model) can be used for the following process:

  • Photoresist stripping
  • Descumming
  • Surface cleaning after storage
  • Surface cleaning after processes using oil pump or diffusion pump vacuum
  • Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
  • Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
  • Removal of organic passivation layers and masks
  • Etching of glass and ceramic
  • Etching of SiO, SiN, Si
  • Removal of polyimide layers

The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Nanolab.

The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information

Plasma Asher 2

Plasma asher for removing AZ resist on 6" wafers: positioned in E-5

The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.

In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).

The typical process parameters when operating the equipment:

  • Photeresist stripping

Pressure: 0.8 - 1.0 mbar

Gas: O2

Power: 600 - 1000 watts

Time: 5 -30 min., depending on photoresist type and thickness

A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 18.

A Descum process in manual mode: O2:70, N2:70, power:150W, time:10 min

Be sure to wait for cooling if the mashine has been used at 1000W right before. At a load at 2 Fused silica wafers resist removed 0.01-01,5um

The other materials have not been tested yet.

The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information



Plasma Asher 3: Descum

Plasma Asher 3: Descum is placed A-5

The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load one 4 inch substrate ad time or few smaller pieces.

In this machine, only O2 and N2 gases are used for processes.

The typical process parameters when operating the equipment:

  • Photeresist descum

Pressure: 0.2 - 0.8mbar Gas: O2 Power: 50% - 100% Time: 1 -10 min., depending on photoresist type and thickness

The other materials have not been tested yet.

The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information



Resist Strip

Resist strip bench in D-3

This resist strip is only for wafers without metal and SU-8.

There are one Remover 1165 bath for stripping and one IPA bath for rinsing.

Here are the main rules for resist strip use:

  • Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
  • After the strip rinse your wafers in the IPA bath for 2-3 min.
  • Rinse your wafers for 4-5 min. in running water after stripping.


The user manual and contact information can be found in LabManager: Resist Strip - requires login


Overview of wet bench 06 and 07

Resist Strip Lift-off
General description Wet stripping of resist Lift-off process
Chemical solution NMP Remover 1165 NMP Remover 1165
Process temperature Up to 65°C Up to 65°C
Batch size

1 - 25 wafers

1 - 25 wafers

Size of substrate
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride

All metals except Type IV (Pb, Te)