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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization click here]'''  
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization click here]''' <br>
 
==Overview of characteristics and where to measure it==
==Overview of characteristics and where to measure it==
{| {{table } }
{| {{table } }
|  width="50" align="center" style="background:#f0f0f0;"|  
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|  
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_microscope| Optical Micro- scopes]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_microscope| Optical Microscopes]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|SEM (incl. EDX)]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|SEM (incl. EDX)]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/Profiler|Stylus profiler]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Topographic measurement#Comparison of Stylus Profilers, Optical Profilers and AFMs at Nanolab|Stylus profilers]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar_S_Neox)|Optical profiler]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement#Comparison of Stylus Profilers, Optical Profilers and AFMs at Nanolab|Optical profilers]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_characterization#Filmtek_4000|Filmtek (reflec- tometer)]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_characterization#Filmtek_4000|Filmtek (reflectometer)]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellip- someter]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellipsometer]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Thickness stylus]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Thickness stylus]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/XPS|XPS]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XPS|XPS]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/4-Point_Probe|4-point probe]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Four-Point Probe|4-point probe]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/XRD|XRD]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XRD|XRD]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap|Life time scanner]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap|Life time scanner]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/KLA-Tencor_Surfscan_6420|Surfscan]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Particle Scanner Takano|Particle scanner]]
|  width="50" align="center" style="background:#f0f0f0;"|'''IR-camera'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|IR-camera
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]'''
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]
|  width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV)|Microspectrophotometer (Craic 20/30 PV)]]
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Breakdown voltage
|align="left"| Breakdown voltage
||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Carrier density/doping profile  
|align="left"| Carrier density/doping profile  
||||||||||||||||||||||||||||||||||||||x
|||||||||||||||||||||||||||||||||||||x||


|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Charge carrier life time||||||||||||||||||||||||||||x||||||||||
|align="left"| Charge carrier life time||||||||||||||||||||||||||||x||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x||||||||
|align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Crystallinity||||||||||||||||||||||||||x||||||||||||
|align="left"| Crystallinity||||||||||||||||||||||||||x||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Deposition uniformity||||||||||x||x||x||||||||||||||||||||||||
|align="left"| Deposition uniformity||||||||||x||x||x||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x||||||||||||||||||||||||||||
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x||||||||||||||||||||||||||||||x
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)/Topography]]||(x)||(x)||x||x||x||||||||||||||||||||||||||||
|align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)/Topography]]||(x)||(x)||x||x||x||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Electrical conductivity||||||||||||||||||||||||x||||||||||||||
|align="left"| Electrical conductivity||||||||||||||||||||||||x||||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x  4)||||||x  4)||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x  <sup>{{fn|4}}</sup>||||||x  <sup>{{fn|4}}</sup>||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x   <sup>{{fn|7}}</sup>||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||||x
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Band gap||||||||||||||x||||x||x||||||||||||||||||
|align="left"| Band gap||||||||||||||x||||x||x||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Particles||x||x||x||||||||||||||||||||||||||||x||||
|align="left"| Particles||x||x||x||||||||||||||||||||||||||||x||||||x
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Phase changes||||||||||||||||||||||||||||||||||||||
|align="left"| Phase changes||||||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Reflectivity||||||||||||x||x||||||x 6)||||||||||||||||||
|align="left"| Reflectivity||||||||||||x||x||||||x <sup>{{fn|6}}</sup>||||||||||||||||||||x
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x||||||||||||||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Resistivity||||||||||||||||||||||x||||||||||||||||
|align="left"| Resistivity||||||||||||||||||||||x||||||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Step coverage||x  1)||x  1)||||||||||||||||||||||||||||||||||
|align="left"| Step coverage||x  <sup>{{fn|1}}</sup>||x  <sup>{{fn|1}}</sup>||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Surface roughness||||||x||x||x||||||||||||||||x||||||||||||
|align="left"| Surface roughness||||||x||x||x||||||||||||||||x||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Thermal conductivity||||||||||||||||||||||||||||||||||||||
|align="left"| Thermal conductivity||||||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x  1)||x  1)||x  2)||x  2)||x  ||x||x||||||x 5)||x  3)||||x||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x  <sup>{{fn|1}}</sup>||x  <sup>{{fn|1}}</sup>||x  <sup>{{fn|2}}</sup>||x  <sup>{{fn|2}}</sup>||x  ||x||x||||||x <sup>{{fn|5}}</sup>||x  <sup>{{fn|3}}</sup>||||x||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||x||
|align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||x||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x  1)||x  1)||||||||||||x||||||||||||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x  <sup>{{fn|1}}</sup>||x  <sup>{{fn|1}}</sup>||||||||||||x||||||||||||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Work function||||||||||||||||||x||||||||||||||||||||
|align="left"| Work function||||||||||||||||||x||||||||||||||||||||||
|-  
|-  
|}
|}
 
<br clear="all">
# Using the cross section method
<sup>{{fn|1}}</sup> Using the cross section method<br>
# Using the create step method
<sup>{{fn|2}}</sup> Using the create step method<br>
# With known resistivity
<sup>{{fn|3}}</sup> With known resistivity<br>
# Composition information for crystalline materials
<sup>{{fn|4}}</sup> Composition information for crystalline materials<br>
# Only single layer
<sup>{{fn|5}}</sup> Only single layer<br>
# Good for characterization of VCSEL structures and DBR mirrors
<sup>{{fn|6}}</sup> Good for characterization of VCSEL structures and DBR mirrors<br>
<sup>{{fn|7}}</sup> Only for crystalline films<br>


== Choose characterization topic ==
== Choose characterization topic ==
*[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|Carrier density (doping) profiler]]
*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]]
*[[/Element analysis|Element analysis]]
*[[/Element analysis|Element analysis]]
*[[/Measurement of film thickness and optical constants|Measurement of film thickness and optical constants]]
*[[/Measurement of film thickness and optical constants|Film thickness and optical constants]]
*[[/Hardness measurement|Hardness measurement]]
*[[/PL mapper|Photoluminescence mapping]]
*[[/PL mapper|Photoluminescence mapping]]
*[[/Four-Point_Probe|Four-Point Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] -->
*[[/Sample imaging|Sample imaging]]
*[[/Sample imaging|Sample imaging]]
*[[/Sample preparation|Sample preparation for inspection]]
*[[/Sample preparation|Sample preparation for inspection]]
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]]
*[[/Stress measurement|Stress measurement]]
*[[/Stress measurement|Stress measurement]]
*[[/Hardness measurement|Hardness measurement]]
*[[/Thickness Measurer|Wafer thickness measurement]]
*[[/Thickness Measurer|Wafer thickness measurement]]
*[[/Topographic measurement|Topographic measurement]]
*[[/Topographic measurement|Topographic measurement]]
*[[Specific Process Knowledge/Characterization/XRD|X-ray diffraction]]  
*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]]
*[[/Four-Point_Probe|Four-Point Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] -->
*[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|Carrier density (doping) profiler]]
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]]  
<!--
<!--
*[[/Other electrical measurements|Other electrical measurements]]
*[[/Other electrical measurements|Other electrical measurements]]
Line 136: Line 141:


===AFM===
===AFM===
*[[/AFM: Atomic Force Microscopy|AFM - ''Atomic Force Microscopy'']]
*[[/AFM: Atomic Force Microscopy|''Atomic Force Microscopy (AFM)'']]
 
===Electrical measurements===
*[[/Four-Point Probe|4-Point Probe]]
*[[/Probe station|Probe station]]
*[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]]


===Element analysis===
===Element analysis===
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===Optical and stylus profilers===
===Optical and stylus profilers===
*[[/Profiler#Optical_Profiler_(Sensofar)|Optical Profiler (Sensofar)]]
*[[/Sensofar_S_Neox|Sensofar S Neox (Optical Profiler)]]
*[[/Profiler#Dektak XTA_new stylus profiler|Dektak XTA stylus profiler]]
*[[/Dektak_XTA|Dektak XTA (Stylus Profiler)]]
*[[/Profiler#Stylus Profiler (Tencor P17)|P17 stylus profiler from KLA-Tencor]]
*[[/Tencor_P17|Tencor P17 (Stylus Profiler)]]
*[[/Profiler#Dektak_III-V_Profiler|Dektak 3ST stylus profiler]]
*[[/Dektak_3ST|Dektak 3ST (Stylus profiler)]]
*[[/Profiler#Stylus_Profiler:_Dektak150|Stylus Profiler:Dektak150]]
*[[/Dektak_150|Dektak 150 (Stylus Profiler)]]


===Optical microscopes===
===Optical microscopes===
*[[/Optical microscope|Optical microscopes]]
*[[/Optical microscope|Optical microscopes]]
===Optical characterization===
===Optical characterization===
*[[/Optical characterization#Ellipsometer|Ellipsometer]]
*[[/Optical characterization#Ellipsometer|Ellipsometer]]
Line 159: Line 170:
===SEMs at DTU Nanolab - building 307/314===
===SEMs at DTU Nanolab - building 307/314===
<!-- *[[LabAdviser/CEN/Quanta 3D FIB/SEM|FIB-SEM FEI QUANTA 200 3D]] -->
<!-- *[[LabAdviser/CEN/Quanta 3D FIB/SEM|FIB-SEM FEI QUANTA 200 3D]] -->
*[[LabAdviser/CEN/Helios Nanolab 600|Dual Beam FEI Helios Nanolab 600]]
*[[LabAdviser/314/Microscopy 314-307/FIB/Helios|Dual Beam FEI Helios Nanolab 600]]
*[[LabAdviser/CEN/Nova NanoSEM 600|SEM FEI Nova 600 NanoSEM]]
*[[LabAdviser/314/Microscopy 314-307/SEM/Nova|SEM FEI Nova 600 NanoSEM]]
*[[LabAdviser/CEN/Quanta FEG 200 ESEM|SEM FEI Quanta 200 ESEM FEG]]
*[[
LabAdviser/314/Microscopy 314-307/SEM/QFEG|SEM FEI Quanta 200 ESEM FEG]]
<!-- *[[LabAdviser/CEN/Inspect S|SEM Inspect S]] -->
<!-- *[[LabAdviser/CEN/Inspect S|SEM Inspect S]] -->


Line 172: Line 184:


===TEMs at DTU Nanolab - building 307/314===
===TEMs at DTU Nanolab - building 307/314===
*[[LabAdviser/CEN/Titan ATEM |Titan ATEM]]
*[[LabAdviser/314/Microscopy 314-307/TEM/ATEM |Titan ATEM]]
*[[LabAdviser/CEN/Titan ETEM |Titan ETEM]]
*[[LabAdviser/314/Microscopy 314-307/TEM/ETEM |Titan ETEM]]
*[[LabAdviser/CEN/Tecnai TEM |Tecnai TEM]]
*[[LabAdviser/314/Microscopy 314-307/TEM/T20 |Tecnai TEM]]


===Electrical measurements===
===XRD===
*[[/4-Point Probe|4-Point Probe]]
*[[/XRD|General page on XRD]], page describing general info relevant to both our XRD's
*[[/Probe station|Probe station]]
*[[/XRD/XRD Powder|XRD Powder]], tabletop XRD for Bregg-Brentano measurements of powders
*[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]]
*[[/XRD/XRD SmartLab|XRD SmartLab]], advanced multipurpose instrument in the cleanroom
*[[/XRD/XRD SmartLab 9kW Rotating Anode|XRD SmartLab 9kW Rotating Anode]] multipurpose system outside the cleanroom


===Various===
===Various===
Line 185: Line 198:
*[[/Thickness Measurer|Thickness Measurer]]
*[[/Thickness Measurer|Thickness Measurer]]
*[[/Hardness measurement|Hardness tester]]
*[[/Hardness measurement|Hardness tester]]
*[[/Particle Scanner Takano|Particle Scanner Takano]]
==Decommissioned equipment==
*[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]]
*[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]]
*[[/X-Ray Diffractometer|X-Ray Diffractometer ]]
*[[/X-Ray Diffractometer|Phillips X-Ray Diffractometer (owned by DTU Fotonik)]]
*[[/XRD|XRD SmartLab]]

Latest revision as of 15:09, 20 June 2025

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Overview of characteristics and where to measure it

Optical Microscopes SEM (incl. EDX) AFM Stylus profilers Optical profilers Filmtek (reflectometer) Ellipsometer Thickness stylus XPS PL mapper 4-point probe Probe station XRD Life time scanner Drop shape analyser Hardness tester Particle scanner IR-camera III-V ECV-profiler Microspectrophotometer (Craic 20/30 PV)
Breakdown voltage
Carrier density/doping profile x
Charge carrier life time x
Contact angle hydrophobic/hydrophillic x
Crystallinity x
Deposition uniformity x x x
Dimensions(in plane) x x (x) (x) x x
Dimensions(height)/Topography (x) (x) x x x
Electrical conductivity x
Element analysis x x x 4 x 4
Film stress x x 7
Imaging x x x x x
Material Hardness x
Band gap x x x
Particles x x x x x
Phase changes
Reflectivity x x x 6 x
Refractive index x x
Resistivity x
Step coverage x 1 x 1
Surface roughness x x x x
Thermal conductivity
Thin film thickness x 1 x 1 x 2 x 2 x x x x 5 x 3 x
Voids in wafer bonding x x x
Wafer thickness x 1 x 1 x
Work function x


1 Using the cross section method
2 Using the create step method
3 With known resistivity
4 Composition information for crystalline materials
5 Only single layer
6 Good for characterization of VCSEL structures and DBR mirrors
7 Only for crystalline films

Choose characterization topic

Choose equipment

AFM

Electrical measurements

Element analysis

Optical and stylus profilers

Optical microscopes

Optical characterization

SEMs at DTU Nanolab - building 307/314

LabAdviser/314/Microscopy 314-307/SEM/QFEG|SEM FEI Quanta 200 ESEM FEG]]

SEM's in building 346

TEMs at DTU Nanolab - building 307/314

XRD

Various

Decommissioned equipment

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